1.

Conference Proceedings
Conference Proceedings
1. Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill
Losee, P.A. ; Li, C.H. ; Kumar, R.J. ; Chow, T.P. ; Bhat, I.B. ; Gutmann, R.J. ; Stahlbush, R.E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1363-1366,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Wafer Bonding and Thinning for 3D-IC Fabrication
Kwon, Y. ; Jindal, A. ; McMahon, J.J. ; Cale, T.S. ; Gutmann, R.J. ; Lu, J-Q.
Pub. info.: Thin film materials, processes, and reliability, plasma processing for the 100 nm node and copper interconnects with low-k inter-level dielectric films : proceedings of the international symposium.  pp.405-415,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-13
3.

Conference Proceedings
Conference Proceedings
3. 3D System-on-a-Chip Using Dielectric Glue Bonding and Cu Damascene Inter-Wafer Interconnects
Lu, J.-Q. ; Jindal, A. ; Kwon, Y. ; McMahon, J.J. ; Lee, K-W. ; Craft, R.P. ; Altemus, B. ; Cheng, D. ; Eisenbraum, E. ; Cale, T.S. ; Gutmann, R.J.
Pub. info.: Thin film materials, processes, and reliability, plasma processing for the 100 nm node and copper interconnects with low-k inter-level dielectric films : proceedings of the international symposium.  pp.381-389,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-13
4.

Conference Proceedings
Conference Proceedings
4. The Chemical-Mechanical Polishing of Copper with Model Slurries
Lee, B-C. ; Duquette, D.J. ; Gutmann, R.J.
Pub. info.: Electrochemical science and technology of copper : proceedings of the international symposium.  pp.103-116,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-30
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Conference Proceedings
Conference Proceedings
5. Dielectric Glue Wafer Bonding and Bonded Wafer Thinning for Wafer-Level 3D Integration
Lu, J.-Q. ; Kwon, Y. ; Jindal, A. ; McMahon, J.J. ; Cale, T.S. ; Gutmann, R.J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.76-86,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-19
6.

Conference Proceedings
Conference Proceedings
6. CHARACTERIZATION OF THE DFZ IN SILICON WAFERS BY A NON-DESTRUCTIVE TECHNIQUE
Borrego, J.M. ; Gutmann, R.J. ; Jensen, N. ; Lo, C.S.
Pub. info.: Materials characterization : symposium held April 15-17, 1986, Palo Alto California, U.S.A..  pp.373-378,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 69
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Conference Proceedings
Conference Proceedings
7. Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1089-1092,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Arnold, E. ; Alok, D.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1041-1044,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Design and Implementation of RESURF MOSFETs in 4H-SiC
Banerjee, S. ; Chatty, K. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.715-718,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. Low-Temperature Silicon Wafer Bonding with Titanium
Yu, J. ; Wang, Y.M. ; Lu, J.-Q. ; Gutmann, R.J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.311-318,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-02
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Conference Proceedings
Conference Proceedings
11. CMP Compatibility of Partially Cured Benzocyclobutene (BCB) for a Via-First 3D IC Process
McMahon, J.J. ; Niklaus, F. ; Kumar, R.J. ; Yu, J. ; Lu, J.-Q. ; Gutmann, R.J.
Pub. info.: Chemical-mechanical planarization - integration technology and realiability : symposium held March 28-31, 2005, San Francisco, California, U.S.A..  pp.63-68,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 867
12.

Conference Proceedings
Conference Proceedings
12. Fabrication Of Air-Gaps Between Cu Interconnects For Low Intralevel k
Bhusari, D.M. ; Wedlake, M.D. ; Kohl, P.A. ; Case, C. ; Klements, F.P. ; Miner, J. ; Lee, B. ; Gutmann, R.J. ; Lee, J.J. ; Shick, R. ; Rhodes, L.
Pub. info.: Materials, technology and reliability for advanced interconnects and low-k dielectrics : symposium held April 23-27, 2000, San Francisco, California, U.S.A..  pp.D4.8-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 612
13.

Conference Proceedings
Conference Proceedings
13. Wafer Bonding Using Low-k Dielectrics aa Bonding Glue in Three-Dimensional Integration
Kwon, Y. ; Lu, J.-Q. ; Gutmann, R.J. ; Kraft, R.P. ; McDonald, J. ; Cale, T.S.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.145-154,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-27
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Conference Proceedings
Conference Proceedings
14. Wafer Bonding Using Dielectric Polymer Thin Films in 3D Integration
Kwon, Y. ; Lu, J.-Q. ; Kraft, R.P. ; McDonald, J.F. ; Gutmann, R.J. ; Cale, T.S.
Pub. info.: Polymer interfaces and thin films : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.231-238,  2002.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 710
15.

Conference Proceedings
Conference Proceedings
15. Planarization Issues in Wafer-Level Three-Dimensional (3D) Integration
Lu, J.-Q. ; Rajagopalan, G. ; Gupta, M. ; Cale, T.S. ; Gutmann, R.J.
Pub. info.: Advances in chemical-mechanical polishing : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.217-230,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 816
16.

Conference Proceedings
Conference Proceedings
16. Non-Contact Characterization Of Recombination Processes In 4H-SiC
Matocha, Kevin ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Wide-bandgap electronic devices.  pp.T4.4-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
17.

Conference Proceedings
Conference Proceedings
17. Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
Matocha, K. ; Chow, T..P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1535-1538,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
18.

Conference Proceedings
Conference Proceedings
18. Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2
Wang, W. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Issacs-Smith, T. ; Williams, J. ; Jones, K.A. ; Lelis, A. ; Tipton, W. ; Scozzie, S. ; Agarwal, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1309-1312,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
19.

Conference Proceedings
Conference Proceedings
19. Gallium Nitride Power Device Design Tradeoffs
Matocha, K. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1531-1534,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
20.

Conference Proceedings
Conference Proceedings
20. Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Arnold, E. ; Alok, D.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1041-1044,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
21.

Conference Proceedings
Conference Proceedings
21. Effects of Bonding Process Parameters on Wafer-to-Wafer Alignment Accuracy in Benzocyclobutene (BCB) Dielectric Wafer Bonding.
Niklaus, F. ; Kumar, R.J. ; McMahon, J.J. ; Yu, J. ; Matthias, T. ; Wimplinger, M. ; Lindner, P. ; Lu, J.-Q. ; Cale, T.S. ; Gutmann, R.J.
Pub. info.: Materials, technology and reliability of advanced interconnects - 2005 : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.393-398,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 863
22.

Conference Proceedings
Conference Proceedings
22. Bonding Characterization of Oxidized PDMS Thin Films
McMahon, J.J. ; Kwon, Y. ; Lu, J.-Q. ; Cale, T.S. ; Gutmann, R.J.
Pub. info.: Thin films : stresses and mechanical properties X : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.99-104,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 795
23.

Conference Proceedings
Conference Proceedings
23. 930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
Wang, W. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1413-1416,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
24.

Conference Proceedings
Conference Proceedings
24. Fundamental Limits for 3D Wafer-to-Wafer Alignment Accuracy
Wimplinger, M. ; Lu, J.-Q. ; Yu, J. ; Kwon, Y. ; Matthias, T. ; Cale, T.S. ; Gutmann, R.J.
Pub. info.: Materials, technology and reliability for advanced interconnects and low-k dielectrics - 2004 : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.309-314,  2004.  Warrendale.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 812
25.

Conference Proceedings
Conference Proceedings
25. Optical Interconnect Components for Wafer Level Heterogeneous Hyper-Integration
Persans, P.D. ; Ojha, M. ; Gutmann, R.J. ; Lu, J.-Q. ; Filin, A. ; Plawsky, J.
Pub. info.: Materials, technology and reliability for advanced interconnects and low-k dielectrics - 2004 : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.315-320,  2004.  Warrendale.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 812
26.

Conference Proceedings
Conference Proceedings
26. Evaluation of Thin Dielectric-Glue Wafer-Bonding for Three Dimensional Integrated Circuit-Applications
Kwon, Y. ; Yu, J. ; McMahon, J.J. ; Lu, J.-Q. ; Cale, T.S. ; Gutmann, R.J.
Pub. info.: Materials, technology and reliability for advanced interconnects and low-k dielectrics - 2004 : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.321-326,  2004.  Warrendale.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 812
27.

Conference Proceedings
Conference Proceedings
27. Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC
Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.757-760,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
28.

Conference Proceedings
Conference Proceedings
28. Gallium Nitride Power Device Design Tradeoffs
Matocha, K. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1531-1534,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
29.

Conference Proceedings
Conference Proceedings
29. Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
Matocha, K. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1535-1538,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
30.

Conference Proceedings
Conference Proceedings
30. Self-Aligned N+ Polysilicon-Gate GaN MOSFETs
Matocha, K. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1633-1636,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
31.

Conference Proceedings
Conference Proceedings
31. Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1089-1092,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393