1.

Conference Proceedings
Conference Proceedings
1. Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
Chatty, K. ; Khemka, V. ; Chow, T. P. ; Gutmann, R. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1331-1334,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
2.

Conference Proceedings
Conference Proceedings
2. Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant
Khemka, V. ; Chatty, K. ; Chow, T. P. ; Gutmann, R. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1211-1214,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)