1.

Conference Proceedings
Conference Proceedings
1. MECHANISM OF Cr DIFFUSION IN GaAs
Yu, S. ; Tan, T. Y. ; Gosele, U.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.747-758,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
2.

Conference Proceedings
Conference Proceedings
2. DETERMINATION OF Ga SELF-DIFFUSION COEFFICIENT IN GaAs
Tan, T. Y. ; Yu, S. ; Gosele, U.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.739-746,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
3.

Conference Proceedings
Conference Proceedings
3. MECHANISMS OF DOPING-ENHANCED SUPERLATTICE DISORDERING AND OF GALLIUM SELF-DIFFUSION IN GaAs
Tan, T. Y. ; Gosele, U. ; Marioton, B. P. R.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.605-612,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
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Conference Proceedings
Conference Proceedings
4. Simulation of Under- and Supersaturation of Gallium Vacancies in Gallium Arsenide During Silicon In- and Outdiffusion
Chen, C. -H. ; Gosele, U. ; Tan, T. Y.
Pub. info.: Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A..  pp.99-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 490
5.

Conference Proceedings
Conference Proceedings
5. Fermi-Level Effect on Group III Atom Interdiffusion in III-V Compounds: Bandgap Heterogeneity and Low Silicon-Doping
Chen, C. -H. ; Gosele, U. ; Tan, T. Y.
Pub. info.: Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A..  pp.105-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 490
6.

Conference Proceedings
Conference Proceedings
6. Point Defects, Diffusion, and Gettering in Silicon
Gosele, U. ; Conrad, D. ; Werner, P. ; Tong, Q-Y. ; Gafiteanu, R. ; Tan, T. Y.
Pub. info.: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.13-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 469
7.

Conference Proceedings
Conference Proceedings
7. Phosphorus and Aluminum Gettering of Gold in Silicon: Simulation and Optimization Considerations
Gafiteanu, R. ; Gosele, U. ; Tan, T. Y.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.297-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
8.

Conference Proceedings
Conference Proceedings
8. Fermi-Level Effect, Electric-Field Effect, and Diffusion Mechanisms in GaAs-Based III-V Compound Semiconductors
Tan, T. Y. ; Chen, C-H. ; Gosele, U. ; Scholz, R.
Pub. info.: Diffusion mechanisms in crystalline materials : symposium held April 13-16, 1998, San Francisco, California, U.S.A..  pp.321-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 527