1.

Conference Proceedings
Conference Proceedings
1. *FORMATION OF OHMIC CONTACTS TO InP BY MEANS OF RAPID THERMAL LOW PRESSURE (METALORGANIC) CHEMICAL VAPOR DEPOSITION (RT-LPMOCVD) TECHNIQUE
Katz, A. ; Feingold, A. ; Pearton, S. J. ; Nakahara, S. ; Lane, E. ; Geva, M.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.393-408,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
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Conference Proceedings
Conference Proceedings
2. Zinc Incorporation And Diffusion in InP During Ap-MOCVD Growth
Chu, S.N.G. ; Logan, R.A. ; Geva, M.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.247-264,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
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Conference Proceedings
Conference Proceedings
3. *ANOTHER STEP IN DEVELOPING A SINGLE WAFER INTEGRATED PROCESS: RAPID THERMAL LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION OF LOCAL DIFFUSED W(Zn) CONTACTS
Katz, A. ; Feingold, A. ; El-Roy, A. ; Moriya, N. ; Pearton, S.J. ; Rusby, A. ; Kovalchick, J. ; Abernathy, C.R. ; Geva, M. ; Lane, E.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.217-228,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
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Conference Proceedings
Conference Proceedings
4. ALTERNATIVE GROUP V PRECURSORS FOR THE GROWTH OF Al-BASED III-V EPITAXIAL LAYERS BY OMVPE
Hobson, W.S. ; Geva, M.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.93-98,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
5.

Conference Proceedings
Conference Proceedings
5. EXCIMER LASER-INDUCED DEPOSITION OF InP and INDIUM-OXIDE FILMS
Donnelly, V. M. ; Geva, M. ; Long, J. ; Karlicek, R. F.
Pub. info.: Laser-controlled chemical processing of surfaces : symposium held November 1983 in Boston, Massachusetts, U.S.A..  pp.73-80,  1984.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 29
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Conference Proceedings
Conference Proceedings
6. SUSCEPTOR AND PROXIMITY RAPID THERMAL ANNEALING OF InP
Katz, A. ; Pearton, S. J. ; Geva, M.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.473-480,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
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Conference Proceedings
Conference Proceedings
7. Novel Fabrication of C-Doped Base InGaAs/InP DHBT Structures for High-Speed Circuit Applications
Kopf, R. F. ; Hamm, R. A. ; Malik, R. J. ; Ryan, R. W. ; Burm, J. ; Tate, A. ; Chen, Y-K. ; Georgiou, G. ; Lang, D. V. ; Geva, M. ; Ren, F.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.413-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
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Conference Proceedings
Conference Proceedings
8. CHEMICAL BEAM EPITAXY (CBE) AND LASER-ENHANCED CBE OF GaAs USING TRIS-DIMETHYLAMINOARSENIC
Dong, H. K. ; Li, N. Y. ; Tu, C. W. ; Geva, M. ; Mitchel, W. C.
Pub. info.: Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.173-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 340
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Conference Proceedings
Conference Proceedings
9. Dopant Quantification by X-ray Absorption Spectroscopy: Zn in InP
Niu, L. ; Karlicek, R. F. ; Geva, M. ; Citrin, P. H.
Pub. info.: Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A..  pp.509-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 406
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Conference Proceedings
Conference Proceedings
10. Properties of InP Simultaneously Doped with Zinc and Sulfur Grown by MOCVD
Alavanja, C. M. ; Pinzone, C. J. ; Sputz, S. K. ; Geva, M.
Pub. info.: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.441-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 442
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Conference Proceedings
Conference Proceedings
11. PROCESS DESIGN FOR NON-ALLOYED CONTACTS TO InP-BASED LASER DEVICES
Katz, A. ; Dautremont-Smith, W. C. ; Chu, S. N. G. ; Pearton, S. J. ; Geva, M. ; Weir, B. E. ; Thomas, P. M. ; Kimerling, L. C.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.401-410,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
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Conference Proceedings
Conference Proceedings
12. Nano-Scale Imaging of Compositional Defect and Dopant Distributions in Semiconductor Laser Heterostructures
Hull, R. ; Moore, M. ; Bahnck, D. ; Geva, M. ; Karlicek, R.F., Jr. ; Stevie, F.A. ; Walker, J.F.
Pub. info.: Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII).  pp.23-38,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-6