1.

Conference Proceedings
Conference Proceedings
1. Vacancies and Their Complexes with H in SiC
Deak, P. ; Gali, A. ; Aradi, B. ; Son, N. T. ; Janzen, E. ; Choyke, W. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.817-820,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
2.

Conference Proceedings
Conference Proceedings
2. Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
Aradi, B. ; Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.561-564,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
Aradi, B. ; Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.561-564,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393