1.

Conference Proceedings
Conference Proceedings
1. Electrical Properties of the Bonding Interface in a (110)/(100) Direct-Silicon-Bonded (DSB) Wafer
J. Lu ; Y. Park ; X. Yu ; G. Rozgonyi
Pub. info.: Semiconductor Wafer Bonding 10: Science, Technology, and Applications.  pp.433-440,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(8)
2.

Conference Proceedings
Conference Proceedings
2. MOS Capacitor Evaluation of Deep States at the Interfacial Grain Boundary in (110/100) Bonded Silicon
L. Yu ; J. Lu ; M. Wagener ; X. Yu ; G. Rozgonyi
Pub. info.: Semiconductor Wafer Bonding 10: Science, Technology, and Applications.  pp.393-399,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(8)