1.

Conference Proceedings
Conference Proceedings
1. Deep Level Transient Spectroscopy Study of Dislocations and Related Defects in SiGe/Si Heterostructures
J. Lu ; Y. Park ; G. Rozgonyi
Pub. info.: Analytical and diagnostic techniques for semiconductor materials, devices and processes 7.  pp.39-46,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(3)
2.

Conference Proceedings
Conference Proceedings
2. Defect and Strain Characterization of Selective-Area-Growth Ge Mesa Structures on Si Substrate
J. Lu ; G. Rozgonyi ; J. Liu ; L. Kimerling ; J. Michel
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.325-331,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
3.

Conference Proceedings
Conference Proceedings
3. Effect of Strained-Si Layer Thickness on Dislocation Distribution and SiGe Relaxation in Thin Buffer Layer Strained-Si/SiGe Heterostructures
J. Lu ; G. Rozgonyi ; M. Seacrist
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.293-298,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
4.

Conference Proceedings
Conference Proceedings
4. Threading vs Misfit Dislocations in Strained Si/SiGe Heterostructures:Preferential Etching and Minority Carrier Transient Spectroscopy
J. Lu ; R. Zhang ; G. Rozgonyi ; E. Yakimov ; N. Yarykin ; M. Seacrist
Pub. info.: Silicon materials science and technology X.  pp.569-578,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(2)
5.

Conference Proceedings
Conference Proceedings
5. Electrical Properties of the Bonding Interface in a (110)/(100) Direct-Silicon-Bonded (DSB) Wafer
J. Lu ; Y. Park ; X. Yu ; G. Rozgonyi
Pub. info.: Semiconductor Wafer Bonding 10: Science, Technology, and Applications.  pp.433-440,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(8)
6.

Conference Proceedings
Conference Proceedings
6. MOS Capacitor Evaluation of Deep States at the Interfacial Grain Boundary in (110/100) Bonded Silicon
L. Yu ; J. Lu ; M. Wagener ; X. Yu ; G. Rozgonyi
Pub. info.: Semiconductor Wafer Bonding 10: Science, Technology, and Applications.  pp.393-399,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(8)