1.

Conference Proceedings
Conference Proceedings
1. Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38)
Kimoto, T. ; Hashimoto, K. ; Fujihira, K. ; Danno, K. ; Nakamura, S. ; Negoro, Y. ; Matsunami, H.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.3-14,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
2.

Conference Proceedings
Conference Proceedings
2. Recent Achievements and Future Challenges in SiC Homoepitaxial Growth
Kimoto, T. ; Nakazawa, S. ; Fujihira, K. ; Hirao, T. ; Nakamura, S. ; Chen, Y ; Hashimoto, K. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.165-170,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Recent Achievements and Future Challenges in SiC Homoepitaxial Growth
Kimoto, T. ; Nakazawa, S. ; Fujihira, K. ; Hirao, T. ; Nakamura, S. ; Chen, Y. ; Hashimoto, K. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.165-170,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393