1.

Conference Proceedings
Conference Proceedings
1. New Achievements on CVD Based Methods for SiC Epitaxial Growth
Crippa, D. ; Valente, G. L. ; Ruggiero, A. ; Neri, L. ; Reitano, R. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Abbondanza, G. ; Abbagnale, G. ; Veneroni, A. ; Omarini, F. ; Zamolo, L. ; Masi, M. ; Roccaforte, F. ; Giannazzo, G. ; Franco, S. Di ; Via, F. La
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.67-72,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. BILAYER STRUCTURES OBTAINED BY PULSED LASER QUENCHING OF BINARY SYSTEMS
Baeri, P. ; Foti, G. ; Grimaldi, M. G. ; Priolo, F. ; Reitano, R. ; Cullis, A. G. ; Chew, N. G.
Pub. info.: Fundamentals of beam-solid interactions and transient thermal processing : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.615-620,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 100
3.

Conference Proceedings
Conference Proceedings
3. Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
La Via, F. ; Galvagno, G. ; Firrincieli, A. ; Roccaforte, F. ; Di Franco, S. ; Ruggiero, A. ; Barbera, M. ; Reitano, R. ; Musumeci, P. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Portuese, F.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.163-166,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
Leone, S. ; Mauceri, M. ; Pistone, G. ; Abbondanza, G. ; Portuese, F. ; Abagnale, G. ; Valente, G.L. ; Crippa, D. ; Barbera, M. ; Reitano, R. ; Foti, G. ; La Via, F.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.179-182,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Structural Properties of 3C-SiC Layers Grown on Si Substrates by Electron Cyclotron Resonance CVD Technique
Giorgis, F. ; Chiodoni, A. ; Cicero, G. ; Ferrero, S. ; Mandracci, P. ; Pirri, C.F. ; Barucca, G. ; Calcagno, L. ; Foti, G. ; Musumeci, P. ; Reitano, R.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
6.

Conference Proceedings
Conference Proceedings
6. Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
Via, F. La ; Roccaforte, F. ; Franco, S. Di ; Ruggiero, A. ; Neri, L. ; Reitano, R. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Abbondanza, G. ; Abbagnale, G. ; Valente, G. L. ; Crippa, D.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.429-432,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485