1.

Conference Proceedings
Conference Proceedings
1. SiC and III-Nitride Growth in Hot-Wall CVD Reactor
Janzen, E. ; Bergman, J. P. ; Danielsson, O. ; Forsberg, U. ; Hallin, C. ; Hassan, J. ul ; Henry, A. ; Ivanov, I. G. ; Kakanakova-Georgieva, A. ; Persson, P. ; Wahab, Q. ul
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.61-66,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
Wahab, Q. ; Ellison, A. ; Zhang, J. ; Forsberg, U. ; Duranova, E. ; Henry, A. ; Madsen, L. D. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1171-1174,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
3.

Conference Proceedings
Conference Proceedings
3. Growth and Characterization of 4H-SiC MESFET Structures Grown by Hot-Wall CVD
Forsberg, U. ; Henry, A. ; Danielsson, Oe. ; Rorsman, N. ; Eriksson, J. ; Wahab, Q. ; Storasta, L. ; Linnarsson, M.K. ; Janzen, E.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
4.

Conference Proceedings
Conference Proceedings
4. Photoluminescence Study of CVD Layers Highly Doped with Nitrogen
Forsberg, U. ; Henry, A. ; Linnarsson, M. K. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.619-622,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
Forsberg, U. ; Danielsson, O. ; Henry, A. ; Linnarsson, M.K. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.203-206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
Zhang, J. ; Forsberg, U. ; Isacson, M. ; Ellison, A. ; Henry, A. ; Kordina, O. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.191-194,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
Henry, A. ; Ellison, A. ; Forsberg, U. ; Magnusson, B. ; Pozina, G. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.593-596,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
Forsberg, U. ; Danielsson, OE. ; Henry, A. ; Linnarsson, M.K. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.203-206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
Zhang, J. ; Forsberg, U. ; Isacson, M. ; Ellison, A. ; Henry, A. ; Kordina, O. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.191-194,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
Henry, A. ; Ellison, A. ; Forsberg, U. ; Magnusson, B. ; Pozina, G. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.593-596,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393