1.

Conference Proceedings
Conference Proceedings
1. Homo-epitaxial and selective area growth of 4H and 6H silicon carbide using a resistively heated vertical reactor
Eshun, E. ; Taylor, C. ; Spencer, M. G. ; Kornegay, K. ; Ferguson, I. ; Gurray, A. ; Stall, R.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.173-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
2.

Conference Proceedings
Conference Proceedings
2. The Development of Resistive Heating for the High Temperature Growth of u-SiC using a Vertical CVD Reactor
Eshun, E. ; Taylor, C. ; Fama Diagne, N. ; Griffin, J. ; Spencer, M. G. ; Ferguson, I. ; Gurary, A. ; Stall, R.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.157-160,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)