1.

Conference Proceedings
Conference Proceedings
1. Relaxation Mechanisms of Strained SiGe Films Bonded to High and Low Viscosity Oxides
Hobart, K.D. ; Kub, F.J. ; Fatemi, M. ; Twigg, M.E. ; Thompson, P.E. ; Kuan, T.S. ; Inoki, C.K.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.85-91,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-35
2.

Conference Proceedings
Conference Proceedings
2. Extended Defects in 4H-SiC PiN Diodes
Twigg, M.E. ; Stahlbush, R.E. ; Fatemi, M. ; Arthur, S.D. ; Fedison, J.B. ; Tucker, J.B. ; Wang, S.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.199-204,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
3.

Conference Proceedings
Conference Proceedings
3. On scaling the thin film Si thickness of SOI substrates. A Perspective on Wafer Bonding for Thin Film Devices
Hobart, K.D. ; Kub, F.J. ; Twigg, M.E. ; Fatemi, M.
Pub. info.: Progress in SOI structures and devices operating at extreme conditions.  pp.299-308,  2002.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 58
4.

Conference Proceedings
Conference Proceedings
4. Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
Twigg, M.E. ; Stahlbush, R.E. ; Fatemi, M. ; Arthur, S.D. ; Fedison, J.B. ; Tucker, J.B. ; Wang, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.537-542,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460