1.

Conference Proceedings
Conference Proceedings
1. Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process
M. Canino ; F. Giannazzo ; F. Roccaforte ; A. Poggi ; S. Solmi ; V. Raineri ; R. Nipoti
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.571-574,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy
F. Giannazzo ; F. Roccaforte ; S.F. Liotta ; V. Raineri
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.545-548,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
P. Fiorenza ; A. Frazzetto ; L.K. Swanson ; F. Giannazzo ; F. Roccaforte
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.699-702,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces
L.K. Swanson ; P. Fiorenza ; F. Giannazzo ; F. Roccaforte
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.719-722,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
5.

Conference Proceedings
Conference Proceedings
5. Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces
L.K. Swanson ; P. Fiorenza ; F. Giannazzo ; S. Alessandrino ; S. Lorenti
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.715-718,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
6.

Conference Proceedings
Conference Proceedings
6. Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001)
F. Giannazzo ; I. Deretzis ; A. La Magna ; S. Di Franco ; N. Piluso
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.113-116,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
7.

Conference Proceedings
Conference Proceedings
7. Electrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current Mapping
F. Giannazzo ; S. Hertel ; A. Albert ; G. Fisichella ; A. La Magna
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.929-932,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
8.

Conference Proceedings
Conference Proceedings
8. Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O
P. Fiorenza ; F. Giannazzo ; A. Frazzetto ; A. Guarnera ; M. Saggio
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.705-710,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
9.

Conference Proceedings
Conference Proceedings
9. Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O
P. Fiorenza ; S. Di Franco ; F. Giannazzo ; S. Rascunà ; M. Saggio
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.701-704,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
10.

Conference Proceedings
Conference Proceedings
10. Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing
M. Vivona ; G. Greco ; R. Lo Nigro ; S. di Franco ; F. Giannazzo
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.428-431,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
11.

Conference Proceedings
Conference Proceedings
11. Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping
V. Raineri ; F. Giannazzo ; F. Roccaforte
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.417-422,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
12.

Conference Proceedings
Conference Proceedings
12. Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC
A. Frazzetto ; F. Roccaforte ; F. Giannazzo ; R. Lo Nigro ; M. Saggio
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.825-828,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
13.

Conference Proceedings
Conference Proceedings
13. Structural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001)
F. Giannazzo ; M. Rambach ; W. Lerch ; C. Bongiorno ; S. Di Franco
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.141-148,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
14.

Conference Proceedings
Conference Proceedings
14. Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces
F. Iucolano ; F. Roccaforte ; F. Giannazzo ; S. Di Franco ; G. Moschetti
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.959-962,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
15.

Conference Proceedings
Conference Proceedings
15. Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures
F. Roccaforte ; F. Iucolano ; F. Giannazzo ; G. Moschetti ; C. Bongiorno
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.967-970,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
16.

Conference Proceedings
Conference Proceedings
16. Local Electrical Properties of the 4H-SiC(0001)/Graphene Interface
S. Sonde ; C. Vecchio ; F. Giannazzo ; R. Yakimova ; E. Rimini
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.769-776,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
17.

Conference Proceedings
Conference Proceedings
17. Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers
F. Roccaforte ; G. Greco ; M.H. Weng ; F. Giannazzo ; V. Raineri
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.808-811,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
18.

Conference Proceedings
Conference Proceedings
18. Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)
S. Sonde ; C. Vecchio ; F. Giannazzo ; C. Bongiorno ; S. Di Franco
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.797-800,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
19.

Conference Proceedings
Conference Proceedings
19. Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications
F. Roccaforte ; A. Frazzetto ; G. Greco ; R. Lo Nigro ; F. Giannazzo
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.203-207,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
20.

Conference Proceedings
Conference Proceedings
20. Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC
J. Eriksson ; F. Roccaforte ; F. Giannazzo ; R. Lo Nigro ; G. Moschetti
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.569-572,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
21.

Conference Proceedings
Conference Proceedings
21. Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy
F. Giannazzo ; M. Rambach ; D. Salinas ; F. Roccaforte ; V. Raineri
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.457-460,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
22.

Conference Proceedings
Conference Proceedings
22. Electrical Activity of Structural Defects in 3C-SiC
J. Eriksson ; F. Roccaforte ; M.H. Weng ; F. Giannazzo ; J. Lorenzzi
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.273-276,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
23.

Conference Proceedings
Conference Proceedings
23. Preliminary Study on the Effect of Micrometric Ge-Droplets on the Characteristics of Ni/4H-SiC Schottky Contacts
M. Vivona ; F. Giannazzo ; K. Alassaad ; V. Soulière ; G. Ferro
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.424-427,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
24.

Conference Proceedings
Conference Proceedings
24. Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC(0001) and SiC(000-1) Substrates
A. La Magna ; I. Deretzis ; F. Giannazzo ; G. Nicotra ; F. Roccaforte
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.1121-1124,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
25.

Conference Proceedings
Conference Proceedings
25. Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC(000-1)
F. Giannazzo ; G. Nicotra ; I. Deretzis ; A. Piazza ; G. Fisichella
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.1129-1132,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
26.

Conference Proceedings
Conference Proceedings
26. The Interaction between Graphene and the SiC Substrate: Ab Initio Calculations for Polar and Nonpolar Surfaces
I. Deretzis ; F. Giannazzo ; A. La Magna
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.1125-1128,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
27.

Conference Proceedings
Conference Proceedings
27. Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
K. Alassaad ; V. Soulière ; M. Vivona ; F. Giannazzo ; F. Roccaforte
Pub. info.: HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France.  pp.27-32,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 806
28.

Conference Proceedings
Conference Proceedings
28. Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4HSiC (0001) Surfaces
F. Giannazzo ; I. Deretzis ; A. La Magna ; G. Nicotra ; C. Spinella
Pub. info.: HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France.  pp.103-108,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 806
29.

Conference Proceedings
Conference Proceedings
29. Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC
A. Frazzetto ; F. Roccaforte ; F. Giannazzo ; R. Lo Nigro ; C. Bongiorno
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.413-416,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
30.

Conference Proceedings
Conference Proceedings
30. Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC
F. Giannazzo ; F. Roccaforte ; D. Salinas ; V. Raineri
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.603-606,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
31.

Conference Proceedings
Conference Proceedings
31. Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN
F. Lucolano ; F. Roccaforte ; F. Giannazzo ; A. Alberti ; V. Raineri
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.1027-1030,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
32.

Conference Proceedings
Conference Proceedings
32. Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts
F. Giannazzo ; S. Hertel ; A. Albert ; A. La Magna ; F. Roccaforte
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1142-1145,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
33.

Conference Proceedings
Conference Proceedings
33. Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
F. Roccaforte ; F. Iucolano ; F. Giannazzo ; S. Di Franco ; V. Puglisi
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1341-1344,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
34.

Conference Proceedings
Conference Proceedings
34. Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)
F. Giannazzo ; C. Bongiorno ; S. Di Franco ; E. Rimini ; V. Raineri
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.637-640,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
35.

Conference Proceedings
Conference Proceedings
35. Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs
G. Greco ; F. Iucolano ; F. Giannazzo ; S. Di Franco ; D. Corso
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.1170-1173,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
36.

Conference Proceedings
Conference Proceedings
36. Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3
P. Fiorenza ; M. Vivona ; L.K. Swanson ; F. Giannazzo ; C. Bongiorno
Pub. info.: HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France.  pp.143-148,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 806
37.

Conference Proceedings
Conference Proceedings
37. Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping
S. Sonde ; F. Giannazzo ; J.R. Huntzinger ; A. Tiberj ; M. Syväjärvi
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.607-610,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
38.

Conference Proceedings
Conference Proceedings
38. Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
M.H. Weng ; F. Roccaforte ; F. Giannazzo ; S. Di Franco ; C. Bongiorno
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.713-716,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
39.

Conference Proceedings
Conference Proceedings
39. On the Viability of Au/3C-SiC Schottky Barrier Diodes
J. Eriksson ; M.H. Weng ; F. Roccaforte ; F. Giannazzo ; S. Di Franco
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.677-680,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
40.

Conference Proceedings
Conference Proceedings
40. Nanoscale Characterization of SiC Interfaces and Devices
F. Giannazzo ; P. Fiorenza ; M. Saggio ; F. Roccaforte
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.407-413,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
41.

Conference Proceedings
Conference Proceedings
41. Comparative Study of the Current Transport Mechanisms in Ni2Si Ohmic Contacts on n- and p-Type Implanted 4H-SiC
M. Vivona ; G. Greco ; S. Di Franco ; F. Giannazzo ; F. Roccaforte
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.665-668,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
42.

Conference Proceedings
Conference Proceedings
42. Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiC
M. Vivona ; K. Al Assaad ; V. Soulière ; F. Giannazzo ; F. Roccaforte
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.706-709,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
43.

Conference Proceedings
Conference Proceedings
43. Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation
F. Roccaforte ; F. Iucolano ; F. Giannazzo ; S. Di Franco ; C. Bongiorno
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1211-1214,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
44.

Conference Proceedings
Conference Proceedings
44. Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy
J. Eriksson ; M.H. Weng ; F. Roccaforte ; F. Giannazzo ; P. Fiorenza
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.833-836,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
45.

Conference Proceedings
Conference Proceedings
45. Electrical Properties of Graphene Contacts to AlGaN/GaN Heterostructures
G. Fisichella ; G. Greco ; F. Roccaforte ; F. Giannazzo
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.986-989,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
46.

Conference Proceedings
Conference Proceedings
46. Anomalous Fowler-Nordheim Tunneling through SiO2/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements
P. Fiorenza ; A. La Magna ; M. Vivona ; F. Giannazzo ; F. Roccaforte
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.123-126,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
47.

Conference Proceedings
Conference Proceedings
47. Characterization of SiO2/SiC Interfaces Annealed in N2O or POCl3
P. Fiorenza ; L.K. Swanson ; M. Vivona ; F. Giannazzo ; C. Bongiorno
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.623-626,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780