1.

Conference Proceedings
Conference Proceedings
1. Characteristics and Ionization Coefficient Extraction of 1kv 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing
Zhu, L. ; Losee, P.A. ; Chow, T.P. ; Jones, K.A. ; Scozzie, C.J. ; Ervin, M.H. ; Shah, P.B. ; Derenge, M.A. ; Vispute, R.D. ; Venkatesan, T. ; Agarwal, A.K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1367-1370,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Stress Origin and Relaxation in Epitaxial AlN Thin Films on SiC
Bathe, Ravi ; Vispute, R.D. ; Habersat, Daniel ; Sharma, R.P. ; Venkatesan, T. ; Scozzie, C.J. ; Ervin, M.H. ; Jones, Ken
Pub. info.: Current issues in heteroepitaxial growth--stress relaxation and self assembly : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A.  pp.87-92,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 696
3.

Conference Proceedings
Conference Proceedings
3. Activating Ion Implants in 4H-SiC by Annealing with An AIN or BN Cap*
Jones, K. ; Shah, P.B. ; Ervin, M.H. ; Deenge, M.A. ; Vispute, R.D. ; Freitas, L.A. ; Gerardi, G.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.117-122,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
4.

Conference Proceedings
Conference Proceedings
4. Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap
Jones, K.A. ; Shah, P.B. ; Derenge, M.A. ; Ervin, M.H. ; Gerardi, G.J. ; Freitas, J.A.,Jr. ; Braga, G.C.B. ; Vispute, R.D. ; Sharma, R.P. ; Holland, O.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.819-822,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. 1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal
Zhu, L. ; Shanbhag, M. ; Chow, T.P. ; Jones, K.A. ; Ervin, M.H. ; Shah, P.B. ; Derenge, M.A. ; Vispute, R.D. ; Venkatesan, T. ; Agarwal, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.843-846,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
6.

Conference Proceedings
Conference Proceedings
6. Structural Defects Formed in Al-Implanted and Annealed 4H-SiC
Jones, K.A. ; Zheleva, T.S. ; Kulkarni, V.N. ; Ervin, M.H. ; Derenge, M.A. ; Vispute, R.D.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.889-892,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC
Jones, K.A. ; Zheleva, T.S. ; Ervin, M.H. ; Shah, P.B. ; Derenge, M.A. ; Gerardi, G.J. ; Freitas, J.A. ; Vispute, R.D.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.929-932,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
8.

Conference Proceedings
Conference Proceedings
8. Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap
Jones, K.A. ; Shah, P.B. ; Derenge, M.A. ; Ervin, M.H. ; Gerardi, G.J. ; Freitas, J.A., Jr. ; Braga, G.C.B. ; Vispute, R.D. ; Sharma, R.P. ; Holland, O.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.819-822,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393