1.

Conference Proceedings
Conference Proceedings
1. Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing
N.A. Mahadik ; R.E. Stahlbush ; E.A. Imhoff ; M.J. Tadjer ; G.E. Ruland
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.233-236,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
M.J. Tadjer ; N.A. Mahadik ; B.N. Feigelson ; R.E. Stahlbush ; E.A. Imhoff
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.297-302,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
M.J. Tadjer ; K.D. Hobart ; E.A. Imhoff ; F.J. Kub
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1147-1150,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers
N.A. Mahadik ; R.E. Stahlbush ; A. Nath ; M.J. Tadjer ; E.A. Imhoff
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.324-327,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
5.

Conference Proceedings
Conference Proceedings
5. Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices
M.J. Tadjer ; K.D. Hobart ; M.A. Mastro ; T.J. Anderson ; E.A. Imhoff
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1215-1218,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648