Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology. pp.37-43, 1996. Pennington, NJ. Electrochemical Society
Dokumaci, O. ; Ronsheim, P. ; Hegde, S. ; Cobral, C., Jr.
Pub. info.:
Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium. pp.105-110, 2003. Pennington, NJ. Electrochemical Society
Dokumaci, O. ; Gossmann, H-J. ; Jones, K. S. ; Law, M. E.
Pub. info.:
Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.151-, 1997. Pittsburgh, Penn. MRS - Materials Research Society
Adam, L. S. ; Law, M. E. ; Dokumaci, O. ; Haddara, Y. ; Murthy, C. ; Park, H. ; Hegde, S. ; Chidambarrao, D. ; Mollis, S. ; Domenicucci, T. ; Dziobkowski, C. ; Jones, K. ; Wong, P. ; Young, R. ; Srinivasan, R.
Pub. info.:
Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.. pp.277-, 1999. Warrendale, PA. MRS - Materials Research Society
Dokumaci, O. ; Ronsheim, P. ; D'emic, C. ; Domenicucci, A. G. ; Hegde, S. ; Kozlowski, P. ; Wong, H-S. P.
Pub. info.:
Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.. pp.205-, 1999. Warrendale, PA. MRS - Materials Research Society
Dokumaci, O. ; Law, M. E. ; Krishnamoorthy, V. ; Jones, K. S.
Pub. info.:
Ion-solid interactions for materials modification and processing : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.167-, 1996. Pittsburgh. MRS - Materials Research Society
Dokumaci, O. ; Ronsheim, P. ; Mocuta, A. ; Mocuta, D. ; Kozlowski, P. ; Chidambarrao, D. ; Saunders, P. ; Chen, H. (IBM)
Pub. info.:
SiGe: materials, processing, and devices : proceedings of the First international symposium. pp.893-902, 2004. Pennington, N.J.. Electrochemical Society