1.

Conference Proceedings
Conference Proceedings
1. Silicon Carbide: A Playground for 1D-Modulation Electronics
Deak, P. ; Buruzs, A. ; Gali, A. ; Frauenheim, T. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.355-358,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO2 Defects
Knaup, J. M. ; Deak, P. ; Gali, A. ; Hajnal, Z. ; Frauenheim, T. ; Choyke, J. W.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.569-572,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
Gali, A. ; Hornos, T. ; Deak, P. ; Son, N. T. ; Janzen, E. ; Choyke, W. J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.519-522,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. HYDROGEN PASSIVATION AND REACTIVATION OF BISTABLE THERMAL DONORS IN SILICON
Bohne, D. I, ; Deak, P. ; Weber, J,.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.395-400,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
5.

Conference Proceedings
Conference Proceedings
5. ON THE DIFFUSION OF OXYGEN DINER IN A SILICON CRYSTAL
Snyder, L. C. ; Corbett, J. W. ; Deak, P. ; Wu, R.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.179-184,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
6.

Conference Proceedings
Conference Proceedings
6. Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?
Thill, C. ; Knaup, J. ; Deak, P. ; Frauenheim, T. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1019-1022,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Dissolution Mechanism of the Carbon Islands at the SiO2/SiC Interface
Krafcsik, O.H. ; Josepovits, K.V. ; Deak, P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.659-662,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
8.

Conference Proceedings
Conference Proceedings
8. Electrical Activity of Isolated Oxygen Defects in SiC
Gali, A. ; Heringer, D. ; Deak, P. ; Hajnal, Z. ; Frauenheim, T. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.463-466,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
9.

Conference Proceedings
Conference Proceedings
9. Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs
Rauls, E. ; Hajnal, Z. ; Gali, A. ; Deak, P. ; Frauenheim, T.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.435-438,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. Boron Centers in 4H-SiC
Aradi, B. ; Gali, A. ; Deak, P. ; Rauls, E. ; Frauenheim, T. ; Son, N.T.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.455-458,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
11.

Conference Proceedings
Conference Proceedings
11. Theory of Hydrogen in Silicon Carbide
Deak, P. ; Gali, A. ; Aradi, B.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.421-426,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
12.

Conference Proceedings
Conference Proceedings
12. Dopant-Related Complexes in SiC
Gali, A. ; Miro, J. ; Deak, P. ; Devaty, R. P. ; Choyke, W. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.795-798,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
13.

Conference Proceedings
Conference Proceedings
13. Vacancies and Their Complexes with H in SiC
Deak, P. ; Gali, A. ; Aradi, B. ; Son, N. T. ; Janzen, E. ; Choyke, W. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.817-820,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
14.

Conference Proceedings
Conference Proceedings
14. The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory
Gerstmann, U. ; Gali, A. ; Deak, P. ; Frauenheim, Th. ; Overhof, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.711-714,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
15.

Conference Proceedings
Conference Proceedings
15. Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
Choyke, W.J. ; Devaty, R.P. ; Bai, S. ; Gali, A. ; Deak, P. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.585-588,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
16.

Conference Proceedings
Conference Proceedings
16. Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
Aradi, B. ; Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.561-564,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
17.

Conference Proceedings
Conference Proceedings
17. Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
Gali, A. ; Deak, P. ; Rauls, E. ; Ordejon, P. ; Carlsson, F.H.C. ; Ivanov, I.G. ; Son, N.T. ; Janzen, E. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.443-448,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
18.

Conference Proceedings
Conference Proceedings
18. (1010)- and (1120)-Surfaces in 2H-, 4H- and 6H-SiC
Rauls, E. ; Hajnal, Z. ; Deak, P. ; Frauenheim, Th.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.365-368,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
19.

Conference Proceedings
Conference Proceedings
19. Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist
Deak, P.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.457-464,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
20.

Conference Proceedings
Conference Proceedings
20. Calculation of Hyperfine Constants of Defects in 4H-SiC
Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E. ; von Bardeleben, H.J. ; Monge, J.-L.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.511-514,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
21.

Conference Proceedings
Conference Proceedings
21. Microwave-CVD Diamond Protective Coating for 3D Structured Silicon Microsensors
Csorbai, H. ; Fuerjes, P. ; Hars, G. ; Duecsoe, C. ; Barsony, I. ; Kalman, E. ; Deak, P.
Pub. info.: 3rd Hungarian Conference on Materials Science, Testing and Informatics.  pp.69-74,  2003.  Zuerich-Uetikon, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 414-415
22.

Conference Proceedings
Conference Proceedings
22. Theoretical Investigation of an Intrinsic Defect in SiC
Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.477-480,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
23.

Conference Proceedings
Conference Proceedings
23. A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC
Deak, P. ; Gali, A. ; Hajnal, Z. ; Frauenheim, Th. ; Son, N.T. ; Janzen, E. ; Choyke, W.J. ; Ordejon, P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.535-538,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
24.

Conference Proceedings
Conference Proceedings
24. Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
Choyke, W.J. ; Devaty, R.P. ; Bai, S. ; Gali, A. ; Deak, P. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.585-588,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
25.

Conference Proceedings
Conference Proceedings
25. Theoretical Study of Antisite Aggregation in α-SiC
Rauls, E. ; Gali, A. ; Deak, P. ; Frauenheim, Th.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.491-494,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
26.

Conference Proceedings
Conference Proceedings
26. Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
Aradi, B. ; Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.561-564,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
27.

Conference Proceedings
Conference Proceedings
27. A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi
Deak, P. ; Aradi, B. ; Gali, A. ; Gerstmann, U. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.523-526,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
28.

Conference Proceedings
Conference Proceedings
28. Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon
Krafcsik, O.H. ; Vida, G. ; Josepovits, K.V. ; Deak, P. ; Radnoczi, G.Z. ; Pecz, B. ; Barsony, I.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.359-362,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
29.

Conference Proceedings
Conference Proceedings
29. Theoretical Investigation of an Intrinsic Defect in SiC
Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.477-480,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
30.

Conference Proceedings
Conference Proceedings
30. Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon
Krafcsik, O.H. ; Vida, G. ; Josepovits, K.V. ; Deak, P. ; Radnoczi, G.Z. ; Pecz, B. ; Barsony, I.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.359-362,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393