1.

Conference Proceedings
Conference Proceedings
1. Dissolution Mechanism of the Carbon Islands at the SiO2/SiC Interface
Krafcsik, O.H. ; Josepovits, K.V. ; Deak, P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.659-662,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
2.

Conference Proceedings
Conference Proceedings
2. Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon
Krafcsik, O.H. ; Vida, G. ; Josepovits, K.V. ; Deak, P. ; Radnoczi, G.Z. ; Pecz, B. ; Barsony, I.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.359-362,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon
Krafcsik, O.H. ; Vida, G. ; Josepovits, K.V. ; Deak, P. ; Radnoczi, G.Z. ; Pecz, B. ; Barsony, I.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.359-362,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393