1.

Conference Proceedings
Conference Proceedings
1. Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena
Edwards, N. V. ; Bremser, M. D. ; Weeks, T. W., Jr. ; Kern, R. S. ; Liu, H. ; Stall, R. A. ; Wickenden, A. E. ; Doverspike, K. ; Gaskill, D. K. ; Freitas, J. A., Jr. ; Rossow, U. ; Davis, R. F. ; Aspnes, D. E.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.405-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
2.

Conference Proceedings
Conference Proceedings
2. Bound Exciton Energies, Biaxial Strains, and Defect Microstructures in GaN/AlN/6H-SiC(0001) Heterostructures
Perry, W. G. ; Zheleva, T. ; Linthicum, K. J. ; Bremser, M. D. ; Davis, R. F. ; Shan, W. ; Song, J. J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.847-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
3.

Conference Proceedings
Conference Proceedings
3. Strain Effects on Excitonic Transitions in GaN
Shan, W. ; Hauenstein, R. J. ; Fischer, A. J. ; Song, J. J. ; Perry, W. G. ; Bremser, M. D. ; Davis, R. F. ; Goldenberg, B.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.841-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
4.

Conference Proceedings
Conference Proceedings
4. Ohmic Contact to n-GaN with TiN Diffusion Barrier
Kaminska, E. ; Piotrowska, A. ; Guziewicz, M. ; Kasjaniuk, S. ; Barcz, A. ; Dynowska, E. ; Bremser, M. D. ; Nam, O. H. ; Davis, R. F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1055-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
5.

Conference Proceedings
Conference Proceedings
5. Relaxation Phenomena in GaN/AlN/6H-SiC Heterostructures
Edwards, N. V. ; Batchelor, A. D. ; Buyanova, I. A. ; Madsen, L. D. ; Bremser, M. D. ; Davis, R. F. ; Aspnes, D. E. ; Monemar, B.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.78.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
6.

Conference Proceedings
Conference Proceedings
6. Detection of Magnetic Resonance on Shallow Donor-Shallow Acceptor and Deep (2.2 eV) Recombination from GaN Films Grown on 6H-SiC
Glaser, E. R. ; Kennedy, T. A. ; Brown, S. W. ; Freitas, J. A., Jr. ; Perry, W. G. ; Bremser, M. D. ; Weeks, T. W., Jr. ; Davis, R. F.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.667-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
7.

Conference Proceedings
Conference Proceedings
7. Selective Growth GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy
Nam, O. H. ; Bremser, M. D. ; Ward, B. L. ; Nemanich, R. J. ; Davis, R. F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.107-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
8.

Conference Proceedings
Conference Proceedings
8. Organometallic Vapor-Phase Lateral Epitaxy of Low Defect Density GaN Layers
Nam, O. H. ; Zheleva, T. S. ; Bremser, M. D. ; Thomson, D. B. ; Davis, R. F.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.301-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
9.

Conference Proceedings
Conference Proceedings
9. Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates
Davis, R. F. ; Nam, O-H. ; Zheleva, T. S. ; Bremser, M. D. ; Linthicum, K. J. ; Gehrke, T. ; Rajagopal, P. ; Thomson, D. B. ; Carlson, E. P.
Pub. info.: III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.91-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 535
10.

Conference Proceedings
Conference Proceedings
10. Luminescence Related to Stacking Faults in Heteroepitaxially Grown Wurtzite GaN
Albrecht, M. ; Christiansen, S. ; Salviati, G. ; Zanotti-Fregonara, C. ; Rebane, Y. T. ; Shreter, Y. G. ; Mayer, M. ; Pelzmann, A. ; Kamp, M. ; Ebeling, K. J. ; Bremser, M. D. ; Davis, R. F. ; Strunk, H. P.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.293-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
11.

Conference Proceedings
Conference Proceedings
11. Recovery of Structural Defects in GaN After Heavy Ion Implantation
Ronning, C. ; Dalmer, M. ; Deicher, M. ; Restle, M. ; Bremser, M. D. ; Davis, R. F. ; Hofsass, H.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.407-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
12.

Conference Proceedings
Conference Proceedings
12. Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior
Kaminska, E. ; Piotrowska, A. ; Jasinski, J. ; Kozubowski, J. ; Barcz, A. ; Golaszewska, K. ; Thomson, D. B. ; Davis, R. F. ; Bremser, M. D.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G9.9.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
13.

Conference Proceedings
Conference Proceedings
13. Selection, Growth, and Characterization of Gate Insulators on MOCVD Gallium Nitride for the Use in High Power Field-Effect Devices
Therrien, R. J. ; Nam, O. H. ; Bremser, M. D. ; Lithicum, K. ; Nimii, H. ; Carlson, E. P. ; Lucovsky, G. ; Davis, R. F.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1107-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
14.

Conference Proceedings
Conference Proceedings
14. Ohmic Contact Formation to Doped GaN
Smith, L. L. ; Bremser, M. D. ; Carlson, E. P. ; Weeks, T. W., Jr. ; Huang, Y. ; Kim, M. J. ; Carpenter, R. W. ; Davis, R. F.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.861-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
15.

Conference Proceedings
Conference Proceedings
15. (Negative) Electron Affinity of AlN and AlGaN Alloys
Nemanich, R. J. ; Benjamin, M. C. ; Bozeman, S. P. ; Bremser, M. D. ; King, S. W. ; Ward, B. L. ; Davis, R. F. ; Chen, B. ; Zhang, Z. ; Bernholc, J.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.777-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
16.

Conference Proceedings
Conference Proceedings
16. Ni/Si-Based Ohmic Contacts to p- and n-Type GaN
Kaminska, E. ; Piotrowska, A. ; Barcz, A. ; Guziewicz, M. ; Kasjaniuk, S. ; Bremser, M. D. ; Davis, R. F. ; Dynowska, E. ; Kwiatkowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1077-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
17.

Conference Proceedings
Conference Proceedings
17. Growth and Doping of AlxGa1-xN Deposited Directly on α(6H)-SiC(0001) Substrates Viia Organometallic Vapor Phase Epitaxy
Bremser, M. D. ; Perry, W. G. ; Edwards, N. V. ; Zheleva, T. ; Parikh, N. ; Aspnes, D. E. ; Davis, R. F.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.195-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
18.

Conference Proceedings
Conference Proceedings
18. Raman Analysis of Electron-Phonon Interactions in GaN Films
Bergman, L. ; Bremser, M. D. ; Christman, J. A. ; King, S. W. ; Davis, R. F. ; Nemanich, R. J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.725-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
19.

Conference Proceedings
Conference Proceedings
19. Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters
Edwards, N. V. ; Yoo, S. D. ; Bremser, M. D. ; Horton, M. N. ; Perkins, N. R. ; Weeks, T. W., Jr. ; Liu, H. ; Stall, R. A. ; Kuech, T. F. ; Davis, R. F. ; Aspnes, D. E.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.781-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
20.

Conference Proceedings
Conference Proceedings
20. Dislocation Luminescence in Wurtzite GaN
Shreter, Y. G. ; Rebane, Y. T. ; Davis, T. J. ; Barnard, J. ; Darbyshire, M. ; Steeds, J. W. ; Perry, W. G. ; Bremser, M. D. ; Davis, R. F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.683-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
21.

Conference Proceedings
Conference Proceedings
21. Lattice Location and Luminescence Behavior of Rare-Earth Elements Implanted in GaN
Dalmer, M. ; Restle, M. ; Stotzler, A. ; Vetter, U. ; Hofsass, H. ; Bremser, M. D. ; Ronning, C. ; Davis, R. F. ; The Isolde Collaboration,
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1021-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
22.

Conference Proceedings
Conference Proceedings
22. In-Plane Optical Anisotropies of AlxGa1-xN Films in Their Regions of Transparency
Rossow, U. ; Edwards, N. V. ; Bremser, M. D. ; Kern, R. S. ; Liu, H. ; Davis, R. F. ; Aspnes, D. E.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.835-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449