1.

Conference Proceedings
Conference Proceedings
1. Transient Enhanced Diffusion and Ostwald Ripening of Ion-Implantation Generated Defects in Silicon
Cowern, N.E.B. ; Mannino, G. ; Roozeboom, F. ; Stalk, P.A. ; Huizing, H.G.A. ; van Berkum, J.G.M ; Toan, N.N. ; Woerlee, P.H. ; Cristiano, F. ; Claverie, A.
Pub. info.: Advances in rapid thermal processing : proceedings of the symposium.  pp.125-132,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-10
2.

Conference Proceedings
Conference Proceedings
2. Interdiffusion Mechanisms in Coherently Strained SiGe Multilayers
Cowern, N.E.B. ; Kersten, W.J. ; Kruif, R.C.M. ; van Berkum, J.G.M. ; de Boer, W.B. ; Gravesteijn, D.J. ; Bulle-Liewma, C.W.T.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.195-209,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4
3.

Conference Proceedings
Conference Proceedings
3. DIFFUSION AND ACTIVATION DURING RAPID THERMAL ANNEALING OF IMPLANTED BORON IN SILICON
Cowern, N.E.B. ; Yallup, K.J. ; Godfrey, D.J. ; Hasko, D.G. ; McMahon, R.A. ; Ahmed, H. ; Stobbs, W.M. ; McPhail, D.S.
Pub. info.: Rapid thermal processing : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A..  pp.65-72,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 52
4.

Conference Proceedings
Conference Proceedings
4. ANOMALOUS TRANSIENT TAIL DIFFUSION OF BORON IN SILICON: KINETIC MODELING OF DIFFUSION AND CLUSTER FORMATION
Cowern, N.E.B. ; Jos, H.F.F. ; Janssen, K.T.F ; Wachters, A.J.H.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.605-608,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
5.

Conference Proceedings
Conference Proceedings
5. Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion
Cowern, N.E.B. ; Mannino, G. ; Roozeboom, F. ; van Berkum, J.G.M ; Colombeau, B. ; Claverie, A.
Pub. info.: Rapid thermal and other short-time processing technologies : proceedings of the international symposium.  pp.61-72,  2000.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-9
6.

Conference Proceedings
Conference Proceedings
6. Concept of Electrically Switchable Reflector Films on the Camber Walls of RTP Reactors
Roozeboom, F. ; van der Sluis, P. ; Cowern, N.E.B.
Pub. info.: Rapid thermal and other short-time processing technologies II : proceedings of the international symposium.  pp.41-48,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-9
7.

Conference Proceedings
Conference Proceedings
7. Diffusion of Ion-Implanted Boron and Silicon in Germanium
Uppal, Suresh ; Willoughby, A.F.W. ; Bonar, J.M. ; Cowern, N.E.B. ; Morris, R.J.H. ; Dowsett, M.G.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.237-242,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
8.

Conference Proceedings
Conference Proceedings
8. Experimental study on the mechanism of carbon diffusion in silicon
Cowern, N.E.B. ; Colombeau, B. ; Roozeboom, F. ; Hopstaken, M. ; Snijders, H. ; Meunier-Beillard, P. ; Lerch, W.
Pub. info.: Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A..  pp.255-262,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 717
9.

Conference Proceedings
Conference Proceedings
9. Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions
Colombeau, B. ; Smith, A.J. ; Cowern, N.E.B. ; Pawlak, B.J. ; Cristiano, F. ; Duffy, R. ; Claverie, A. ; Ortiz, C.J. ; Pichler, P. ; Lampin, E. ; Zechner, C.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.91-102,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
10.

Conference Proceedings
Conference Proceedings
10. The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.281-286,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
11.

Conference Proceedings
Conference Proceedings
11. Doping and Mobility Profiles in Defect-Engineered Ultra-Shallow Junctions : Bulk and SOI
Smith, A.J. ; Colombeau, B. ; Gwilliam, R. ; Collart, E. ; Cowern, N.E.B. ; Sealy, B.J.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.109-114,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
12.

Conference Proceedings
Conference Proceedings
12. The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.423-430,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
13.

Conference Proceedings
Conference Proceedings
13. 5 Effect of Amorphization on Activation and Deactivation of Boron in Source/Drain, Channel and Poly Gate
Pawlak, B.J. ; Duffy, R. ; Janssens, T. ; Vandenorst, W. ; Seven, S. ; Richard, O. ; Benedetti, A. ; Eyben, P. ; Colombeau, B. ; Cowern, N.E.B. ; Camilla-Castillo, R.A. ; Jones, K.S. ; Aboy, M.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.43-49,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
14.

Conference Proceedings
Conference Proceedings
14. Optimization of Fluorine Co-Implantation for PMOS Source and Drain Extension Formation for 65 nm Technology Node
Graoui, H. ; Hilkene, M. ; McComb, B. ; Castle, M. ; Felch, S. ; Cowern, N.E.B. ; Al-Bayati, A. ; Tjandra, A. ; Foad, M.A.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.247-252,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
15.

Conference Proceedings
Conference Proceedings
15. TRANSIENT DIFFUSION OF SOPANTS IN SILICON: PHYSICS MODELING, AND PRACTICAL SIMULATIONS
Cowern, N.E.B.
Pub. info.: Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.20-33,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-6