1.

Conference Proceedings
Conference Proceedings
1. Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions
Colombeau, B. ; Smith, A.J. ; Cowern, N.E.B. ; Pawlak, B.J. ; Cristiano, F. ; Duffy, R. ; Claverie, A. ; Ortiz, C.J. ; Pichler, P. ; Lampin, E. ; Zechner, C.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.91-102,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
2.

Conference Proceedings
Conference Proceedings
2. The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.281-286,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
3.

Conference Proceedings
Conference Proceedings
3. The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.423-430,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
4.

Conference Proceedings
Conference Proceedings
4. 5 Effect of Amorphization on Activation and Deactivation of Boron in Source/Drain, Channel and Poly Gate
Pawlak, B.J. ; Duffy, R. ; Janssens, T. ; Vandenorst, W. ; Seven, S. ; Richard, O. ; Benedetti, A. ; Eyben, P. ; Colombeau, B. ; Cowern, N.E.B. ; Camilla-Castillo, R.A. ; Jones, K.S. ; Aboy, M.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.43-49,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05