1.

Conference Proceedings
Conference Proceedings
1. Ga vacancies as compensating centers in homogeneously or ｦﾄ-doped GaAs(Si)layers
Laine,T. ; Saarinen,K. ; Hautojarvi,P. ; Corbel,C. ; Pfeiffer,L.N. ; Citrin,P.H. ; Ashwin,M.J. ; Newman,R.C.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.879-884,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
2.

Conference Proceedings
Conference Proceedings
2. Positron Experiments in 5-Doped GaAs(Si)Superlattices:Defect Properties and Positron Diffusion
Laine,T. ; Saarinen,K. ; Hautojarvi,P. ; Corbel,C. ; Ashwin,M.J. ; Newman,R.C.
Pub. info.: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.551-553,  1997.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 255-257