1.

Conference Proceedings
Conference Proceedings
1. Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method
Contreras, S. ; Zielinski, M. ; Konczewicz, L. ; Blanc, C. ; Juillaguet, S. ; Muller, R. ; Kunecke, U. ; Wellmann, P.J. ; Camassel, I.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.633-636,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC I.ayers
Blanque, S. ; Perez, R. ; Mestres, N. ; Contreras, S. ; Camassel, J. ; Godignon, P.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.795-798,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates
Blanc, C. ; Zielinski, M. ; Souliere, V. ; Sartel, C. ; Juillaguet, S. ; Contreras, S. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.117-120,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Hetero-Epitaxial Growth of 3C-SiC on SOI using HMDS
Aboughe-Nze, P. ; Planes, N. ; Ravetz, M. ; Fraisse, B. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Monteil, Y. ; Rushworth, S. ; Camassel, J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.92-99,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-35
5.

Conference Proceedings
Conference Proceedings
5. Low Frequency Noise in n-Type Gallium Nitride
Dyakonova, N. ; Levinshtein, M. ; Contreras, S. ; Knap, W. ; Beaumont, B. ; Gibart, P.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.21-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
6.

Conference Proceedings
Conference Proceedings
6. Intrinsic Mobility of Conduction Electrons in 4H-SiC
Pernot, J. ; Contreras, S. ; Neyret, E. ; Cioccio, L.Di. ; Zawadzki, W. ; Robert, J.L.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.483-486,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
7.

Conference Proceedings
Conference Proceedings
7. Al and Al/C High Dose Implantation in 4H-SiC
Bluet, J. M. ; Pernot, J. ; Billon, T. ; Contreras, S. ; Michaud, J. F. ; Robert, J. L. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.885-888,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
8.

Conference Proceedings
Conference Proceedings
8. Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
Blanque, S. ; Lyonnet, J. ; Camassel, J. ; Perez, R. ; Terziyska, P. ; Contreras, S. ; Godignon, P. ; Mestres, N. ; Pascual, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.645-648,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. Characterization of 3C-SiC/SOI Deposited with HMDS
Planes, N. ; Aboughe-Nze, P. ; Ravetz, M. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Fraisse, B. ; Camassel, J. ; Monteil, Y. ; Rushworth, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.599-602,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
10.

Conference Proceedings
Conference Proceedings
10. Electrical Characterization of Heavily Al Doped 4H-SiC Layer Grown by Vapor-Liquid-Solid Epitaxy in Al-Si Melt
Godignon, P. ; Jacquier, C. ; Blanque, S. ; Montserrat, J. ; Ferro, G. ; Contreras, S. ; Zielinski, M. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.421-424,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485