1.

Conference Proceedings
Conference Proceedings
1. Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties
Suzuki, S. ; Cho, W.J. ; Kosugi, R. ; Senzaki, J. ; Harada, S. ; Fukuda, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.643-646,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
2.

Conference Proceedings
Conference Proceedings
2. Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face
Fukuda, K. ; Suzuki, S. ; Senzaki, J. ; Cho, W.J. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.631-634,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
3.

Conference Proceedings
Conference Proceedings
3. Temperature Dependences of Channel Mobility and Threshold Voltage in 4H- and 6H-SiC MOSFETs
Harada, S. ; Kosugi, R. ; Senzaki, J. ; Suzuki, S. ; Cho, W.J. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640