1.

Conference Proceedings
Conference Proceedings
1. Growth of AlN and AlN-SiC Solid Solution by Sublimation Method
Anikin, M. ; Chaussende, D. ; Pernot, E. ; Chaix-Pluchery, O. ; Roussel, H. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1501-1504,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism
Soueidan, M. ; Ferro, G. ; Stoemenos, J. ; Polychroniadis, E.K. ; Chaussende, D. ; Soares, F. ; Juillaguet, S. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.287-290,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. ln Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging
Chaussende, D. ; Wellmann, P.J. ; Ucar, M. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.63-66,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Characterization of Bulk <> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
Latu-Romain, L. ; Chaussende, D. ; Balloud, C. ; Juillaguet, S. ; Rapenne, L. ; Pernot, E. ; Camassel, J. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.99-102,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Gas Fed Top-Seeded Solution Growth of Silicon Carbide
Chaussende, D. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.111-114,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
Vicente, P. ; Pernot, E. ; Chaussende, D. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.729-732,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Numerical simulation of SiC processes: A characterization tool for the design of epitaxial structures in electronics
Pans, M. ; Nishizawa, S. ; Wettmann, P. ; Ucar, M. ; Blanquet, E. ; Dedulle, J. M. ; Baillet, F. ; Chaussende, D. ; Bernard, C. ; Madar, R.
Pub. info.: EUROCVD-15, fifteenth European Conference on Chemical Vapor Deposition : proceedings of the international symposium.  pp.1-12,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-09
8.

Conference Proceedings
Conference Proceedings
8. Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method
Chaussende, D. ; Latu-Romain, L. ; Auvray, L. ; Ucar, M. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.225-228,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes
Pons, M. ; Blanquet, E. ; Dedulle, J. M. ; Ucar, M. ; Wellmann, P. ; Danielsson, O. ; Ferret, P. ; Cioccio, L. Di ; Baillet, F. ; Chaussende, D. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.3-8,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
10.

Conference Proceedings
Conference Proceedings
10. Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
Chaussende, D. ; Chaudouet, P. ; Auvray, L. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.387-390,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
11.

Conference Proceedings
Conference Proceedings
11. Wettability Study of SiC in Correlation with XPS Analysis
Stambouli, V. ; Chaussende, D. ; Anikin, M. ; Berthome, G. ; Thoreau, V. ; Joud, J.C.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.423-426,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
12.

Conference Proceedings
Conference Proceedings
12. 3C-SiC Pseudosubstrates for the Growth of Cubic GaN
Aboughe-Nze, P. ; Chassagne, T. ; Chaussende, D. ; Monteil, Y. ; Cauwet, F. ; Bustarret, E. ; Deneuville, A. ; Bentoumi, G. ; Martinez-Guerrerro, E. ; Daudin, B. ; Feuillet, G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1467-1470,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
13.

Conference Proceedings
Conference Proceedings
13. Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
Ferro, G. ; Chaussende, D. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.287-290,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
14.

Conference Proceedings
Conference Proceedings
14. Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
Auvray, L. ; Chaussende, D. ; Baillet, F. ; Charpentier, L. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.135-138,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
15.

Conference Proceedings
Conference Proceedings
15. In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth
Charpentier, L. ; Baillet, F. ; Chaussende, D. ; Auvray, L. ; Pons, M. ; Pernot, E. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.139-142,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
16.

Conference Proceedings
Conference Proceedings
16. A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
Charpentier, L. ; Baillet, F. ; Chaussende, D. ; Pernot, E. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.87-90,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
17.

Conference Proceedings
Conference Proceedings
17. Heat Transfer Modeling of a New Crystal Growth Process
Baillet, F. ; Chaussende, D. ; Charpentier, L. ; Pernot, E. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.103-106,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
18.

Conference Proceedings
Conference Proceedings
18. Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
Pernot, E. ; El Harrouni, I. ; Mermoux, M. ; Bluet, J.M. ; Anikin, M. ; Chaussende, D. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.265-268,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
19.

Conference Proceedings
Conference Proceedings
19. Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
Ferro, G. ; Chaussende, D. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.287-290,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
20.

Conference Proceedings
Conference Proceedings
20. Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
Chaussende, D. ; Jacquier, C. ; Ferro, G. ; Viala, J.C. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.85-90,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
21.

Conference Proceedings
Conference Proceedings
21. Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
Vicente, P. ; Pernot, E. ; Chaussende, D. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.729-732,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
22.

Conference Proceedings
Conference Proceedings
22. Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation
Chaussende, D. ; Baillet, F. ; Charpentier, L. ; Pernot, E. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.25-28,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
23.

Conference Proceedings
Conference Proceedings
23. Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Chaussende, D. ; Balloud, C. ; Auvray, L. ; Baillet, F. ; Zielinski, M. ; Juillaguet, S. ; Mermoux, M. ; Pernot, E. ; Camassel, J. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.91-94,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460