1.

Conference Proceedings
Conference Proceedings
1. Growth of AlN and AlN-SiC Solid Solution by Sublimation Method
Anikin, M. ; Chaussende, D. ; Pernot, E. ; Chaix-Pluchery, O. ; Roussel, H. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1501-1504,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Characterization of Bulk <> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
Latu-Romain, L. ; Chaussende, D. ; Balloud, C. ; Juillaguet, S. ; Rapenne, L. ; Pernot, E. ; Camassel, J. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.99-102,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
Vicente, P. ; Pernot, E. ; Chaussende, D. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.729-732,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth
Charpentier, L. ; Baillet, F. ; Chaussende, D. ; Auvray, L. ; Pons, M. ; Pernot, E. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.139-142,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
Charpentier, L. ; Baillet, F. ; Chaussende, D. ; Pernot, E. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.87-90,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
6.

Conference Proceedings
Conference Proceedings
6. Heat Transfer Modeling of a New Crystal Growth Process
Baillet, F. ; Chaussende, D. ; Charpentier, L. ; Pernot, E. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.103-106,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
7.

Conference Proceedings
Conference Proceedings
7. Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
Pernot, E. ; El Harrouni, I. ; Mermoux, M. ; Bluet, J.M. ; Anikin, M. ; Chaussende, D. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.265-268,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
8.

Conference Proceedings
Conference Proceedings
8. Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
Vicente, P. ; Pernot, E. ; Chaussende, D. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.729-732,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation
Chaussende, D. ; Baillet, F. ; Charpentier, L. ; Pernot, E. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.25-28,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
10.

Conference Proceedings
Conference Proceedings
10. Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Chaussende, D. ; Balloud, C. ; Auvray, L. ; Baillet, F. ; Zielinski, M. ; Juillaguet, S. ; Mermoux, M. ; Pernot, E. ; Camassel, J. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.91-94,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460