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15 results

Conference Proceedings

1. Growth of AlN and AlN-SiC Solid Solution by Sublimation Method

Anikin, M. ; Chaussende, D. ; Pernot, E. ; Chaix-Pluchery, O. ; Roussel, H. ; Pons, M. ; Madar, R.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1501-1504, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. ln Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging

Chaussende, D. ; Wellmann, P.J. ; Ucar, M. ; Pons, M. ; Madar, R.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.63-66, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Characterization of Bulk <> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method

Latu-Romain, L. ; Chaussende, D. ; Balloud, C. ; Juillaguet, S. ; Rapenne, L. ; Pernot, E. ; Camassel, J. ; Pons, M. ; Madar, R.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.99-102, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Gas Fed Top-Seeded Solution Growth of Silicon Carbide

Chaussende, D. ; Pons, M. ; Madar, R.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.111-114, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. Numerical simulation of SiC processes: A characterization tool for the design of epitaxial structures in electronics

Pans, M. ; Nishizawa, S. ; Wettmann, P. ; Ucar, M. ; Blanquet, E. ; Dedulle, J. M. ; Baillet, F. ; Chaussende, D. ; Bernard, C. ; Madar, R.

Pub. info.:	EUROCVD-15, fifteenth European Conference on Chemical Vapor Deposition : proceedings of the international symposium. pp.1-12, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-09

Conference Proceedings

6. Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method

Chaussende, D. ; Latu-Romain, L. ; Auvray, L. ; Ucar, M. ; Pons, M. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.225-228, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

7. Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes

Pons, M. ; Blanquet, E. ; Dedulle, J. M. ; Ucar, M. ; Wellmann, P. ; Danielsson, O. ; Ferret, P. ; Cioccio, L. Di ; Baillet, F. ; Chaussende, D. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.3-8, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

8. Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H

Chaussende, D. ; Chaudouet, P. ; Auvray, L. ; Pons, M. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.387-390, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

9. Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method

Auvray, L. ; Chaussende, D. ; Baillet, F. ; Charpentier, L. ; Pons, M. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.135-138, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth

Charpentier, L. ; Baillet, F. ; Chaussende, D. ; Auvray, L. ; Pons, M. ; Pernot, E. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.139-142, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

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