1.

Conference Proceedings
Conference Proceedings
1. Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method
Chaussende, D. ; Latu-Romain, L. ; Auvray, L. ; Ucar, M. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.225-228,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
Chaussende, D. ; Chaudouet, P. ; Auvray, L. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.387-390,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
3.

Conference Proceedings
Conference Proceedings
3. Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
Auvray, L. ; Chaussende, D. ; Baillet, F. ; Charpentier, L. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.135-138,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth
Charpentier, L. ; Baillet, F. ; Chaussende, D. ; Auvray, L. ; Pons, M. ; Pernot, E. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.139-142,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Chaussende, D. ; Balloud, C. ; Auvray, L. ; Baillet, F. ; Zielinski, M. ; Juillaguet, S. ; Mermoux, M. ; Pernot, E. ; Camassel, J. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.91-94,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460