1.

Conference Proceedings
Conference Proceedings
1. Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
Xie, Z. Y. ; Wei, C. H. ; Li, L. Y. ; Edgar, J. H. ; Chaudhuri, J. ; Ignatiev, C.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.39.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
2.

Conference Proceedings
Conference Proceedings
2. Growth and Characterization of BxGa1-xN on 6H-SiC (0001) by MOVPE
Wei, C. H. ; Xie, Z. Y. ; Edgar, J. H. ; Zeng, K. C. ; Lin, J. Y. ; Jiang, H. X. ; Ignatiev, C. ; Chaudhuri, J. ; Braski, D. N.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.79.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
3.

Conference Proceedings
Conference Proceedings
3. Low-Temperature Chemical Vapor Deposition of 3C-SiC on 6H-SiC - An X-ray Triple-Crystal Diffractometry and X-ray Topography Study
Chaudhuri, J. ; Ignatiev, K. ; Edgar, J. H. ; Xie, Z. Y. ; Gao, Y.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.169-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512