1.

Conference Proceedings
Conference Proceedings
1. 37 Electron Mobility Dependence of W/HfO2 Gate Stacks on Interfacial Layer Preparation
Callegari, A. ; Jamison, P. ; Zafar, S. ; Lacey, D. ; McFeefy, F. ; Shepard, J. ; Gusev, E.P. ; Cartier, E. ; Jammy, R.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.319-323,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
2.

Conference Proceedings
Conference Proceedings
2. Characterization of Bulk and Interface Properties of Dielectric Layers and Stacks
Okorn-Schmidt, H.F. ; Gusev, E.P. ; Buchanan, D.A. ; Cartier, E. ; Guha, S. ; Bojarczuk, N.A. ; Rath, D.L. ; Callegari, A. ; Gribelyuk, M. ; Copel, M.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.505-512,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2