1.

Conference Proceedings
Conference Proceedings
1. Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism
Soueidan, M. ; Ferro, G. ; Stoemenos, J. ; Polychroniadis, E.K. ; Chaussende, D. ; Soares, F. ; Juillaguet, S. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.287-290,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC I.ayers
Blanque, S. ; Perez, R. ; Mestres, N. ; Contreras, S. ; Camassel, J. ; Godignon, P.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.795-798,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Is the Al Solubility Limit in SiC Temperature Dependent or not?
Jacquier, C. ; Ferro, G. ; Zielinski, M. ; Polychroniadis, E. K. ; Andreadou, A. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.125-128,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Aluminum Doping of 4H-SiC Grown with HexaMethylDiSilane
Sartel, C. ; Souliere, V. ; Zielinski, M. ; Monteil, Y. ; Camassel, J. ; Rushworth, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.121-124,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates
Blanc, C. ; Zielinski, M. ; Souliere, V. ; Sartel, C. ; Juillaguet, S. ; Contreras, S. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.117-120,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Hetero-Epitaxial Growth of 3C-SiC on SOI using HMDS
Aboughe-Nze, P. ; Planes, N. ; Ravetz, M. ; Fraisse, B. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Monteil, Y. ; Rushworth, S. ; Camassel, J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.92-99,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-35
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Conference Proceedings
Conference Proceedings
7. Specific Aspects of Type II Heteropolytype Stacking Faults in SiC
Juillagues, S. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.335-340,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
8.

Conference Proceedings
Conference Proceedings
8. Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix
Camassel, J. ; Juillaguet, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.331-334,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. Growth of Cubic Silicon Carbide Crystals from Solution
Eid, J. ; Santailler, J.L. ; Ferrand, B. ; Ferret, P. ; Pesentia, J. ; Basset, A. ; Passero, A. ; Mantzari, A. ; Polychroniadis, E.K. ; Balloud, C. ; Soares, P. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.123-128,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
10.

Conference Proceedings
Conference Proceedings
10. Characterization of Bulk <> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
Latu-Romain, L. ; Chaussende, D. ; Balloud, C. ; Juillaguet, S. ; Rapenne, L. ; Pernot, E. ; Camassel, J. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.99-102,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
11.

Conference Proceedings
Conference Proceedings
11. Process Optimisation for <11-2> 4H-SiC MOSFET Applications
Blanc, C. ; Tournier, D. ; Godignon, P. ; Brink, D.J. ; Souliere, V. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1051-1054,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
12.

Conference Proceedings
Conference Proceedings
12. PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces
Perez-Tomas, A. ; Godignon, P. ; Camassel, J. ; Mestres, N. ; Souliere, V.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1047-1050,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
13.

Conference Proceedings
Conference Proceedings
13. Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
Vicente, P. ; Pernot, E. ; Chaussende, D. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.729-732,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
14.

Conference Proceedings
Conference Proceedings
14. Full Si Wafer Conversion into Bulk 3C-SiC
Leycuras, A. ; Tottereau, O. ; Vicente, P. ; Falkovsky, L.A. ; Girard, P. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.147-150,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
15.

Conference Proceedings
Conference Proceedings
15. Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman Spectroscopy
Perlin, P. ; Suski, T. ; Polian, A. ; Chervin, J. C. ; Knap, W. ; Camassel, J. ; Grzegory, I. ; Porowski, S. ; Erickson, J. W.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.689-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
16.

Conference Proceedings
Conference Proceedings
16. Infrared Investigation of Implantation Damage in 6H-SiC
Camassel, J. ; Wang, H. ; Pernot, J. ; Godignon, P. ; Mestres, N. ; Pascual, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.859-862,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
17.

Conference Proceedings
Conference Proceedings
17. Low Temperature Luminescence of Gallium Phosphide Unde Hydrostatic Pressure
Gil, B. ; Baj, M. ; Camassel, J. ; Mathieu, H. ; Benoit, C. ; La Guillame, A. ; Pascual, J. ; Konczewicz, L.
Pub. info.: Collective phenomena and transport properties.  pp.119-122,  1984.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 22(1)
18.

Conference Proceedings
Conference Proceedings
18. Al and Al/C High Dose Implantation in 4H-SiC
Bluet, J. M. ; Pernot, J. ; Billon, T. ; Contreras, S. ; Michaud, J. F. ; Robert, J. L. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.885-888,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
19.

Conference Proceedings
Conference Proceedings
19. SiC In Situ Pre-Growth Etching: A Thermodynamic Study
Neyret, E. ; Cioccio, L. Di ; Blanquet, E. ; Raffy, C. ; Pudda, C. ; Billon, T. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1041-1044,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
20.

Conference Proceedings
Conference Proceedings
20. Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
Blanque, S. ; Lyonnet, J. ; Camassel, J. ; Perez, R. ; Terziyska, P. ; Contreras, S. ; Godignon, P. ; Mestres, N. ; Pascual, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.645-648,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
21.

Conference Proceedings
Conference Proceedings
21. Characterization of 3C-SiC/SOI Deposited with HMDS
Planes, N. ; Aboughe-Nze, P. ; Ravetz, M. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Fraisse, B. ; Camassel, J. ; Monteil, Y. ; Rushworth, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.599-602,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
22.

Conference Proceedings
Conference Proceedings
22. SOL Thinning Effects on 3C-SiC on SOI
Planes, N. ; Moller, H. ; Camassel, J. ; Stoemenos, Y. ; Falkovski, L. ; Eickhoff, M. ; Krotz, G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.301-304,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
23.

Conference Proceedings
Conference Proceedings
23. Electrical Properties of p-Type In Situ Doped vs. Al-Implanted 4H-SiC
Pernot, J. ; Contreras, S. ; Camassel, J. ; Robert, J. L.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.401-404,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
24.

Conference Proceedings
Conference Proceedings
24. Comparative Evaluation of Free-Standing 3C-SiC Crystals
Polychroniadis, E. K. ; Balloud, C. ; Juillaguet, S. ; Ferro, G. ; Monteil, Y. ; Camassel, J. ; Stoemenos, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.229-232,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
25.

Conference Proceedings
Conference Proceedings
25. Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
Jacquier, C. ; Ferro, G. ; Balloud, C. ; Zielinski, M. ; Camassel, J. ; Polychroniadis, E. ; Stoemenos, J. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.735-738,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
26.

Conference Proceedings
Conference Proceedings
26. Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiC
Blanc, C. ; Pernot, J. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.649-652,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
27.

Conference Proceedings
Conference Proceedings
27. Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers
Ferro, G. ; Panknin, D. ; Stoemenos, J. ; Balloud, C. ; Camassel, J. ; Polychroniadis, E. ; Monteil, Y. ; Skorupa, W.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.313-316,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
28.

Conference Proceedings
Conference Proceedings
28. Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC
Kunert, H.W. ; Maurice, T.P. ; Hauser, T. ; Malherbe, J.B. ; Prinsloo, L.C. ; Brink, D.J. ; Falkovsky, L.A. ; Camassel, J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.275-278,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
29.

Conference Proceedings
Conference Proceedings
29. Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
Pernot, J. ; Bluet, J.M. ; Camassel, J. ; Cioccio, L.D.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.385-388,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
30.

Conference Proceedings
Conference Proceedings
30. Full Si Wafer Conversion into Bulk 3C-SiC
Leycuras, A. ; Tottereau, O. ; Vicente, P. ; Falkovsky, L.A. ; Girard, P. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.147-150,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
31.

Conference Proceedings
Conference Proceedings
31. SiC Base Micro-Probe for Myocardial Ischemia Monitoring
Pascual, J. ; Valvo, F. ; Godignon, P. ; Aguilo, J. ; Millan, J. ; Camassel, J. ; Mestres, N.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1483-1486,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
32.

Conference Proceedings
Conference Proceedings
32. Optical Characterization of SiC Materials: Bulk and Implanted Layers
Camassel, J. ; Vicente, P. ; Falkovski, L.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.335-340,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
33.

Conference Proceedings
Conference Proceedings
33. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1435-1438,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
34.

Conference Proceedings
Conference Proceedings
34. Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers
Juillaguet, S. ; Balloud, C. ; Pernot, J. ; Sartel, C. ; Souliere, V. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.577-580,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
35.

Conference Proceedings
Conference Proceedings
35. Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements
Juillaguet, S. ; Zielinski, M. ; Balloud, C. ; Sartel, C. ; Consejo, C. ; Boyer, B. ; Souliere, V. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.775-778,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
36.

Conference Proceedings
Conference Proceedings
36. Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC
Zielinski, M. ; Balloud, C. ; Juillaguet, S. ; Boyer, B. ; Souliere, V. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.449-452,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
37.

Conference Proceedings
Conference Proceedings
37. Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Chassagne, T. ; Ferro, G. ; Wang, H. ; Stoemenos, Y. ; Peyre, H. ; Contreras, S. ; Camassel, J. ; Monteil, Y. ; Ghyselen, B.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.343-346,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
38.

Conference Proceedings
Conference Proceedings
38. Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite
Wollweber, J. ; Mantzari, A. ; Polychroniadis, E.K. ; Balloud, C. ; Freudenberg, A. ; Nitschke, R. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.143-146,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
39.

Conference Proceedings
Conference Proceedings
39. From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks
Pernot, J. ; Camassel, J. ; Peyre, H. ; Contreras, S. ; Robert, J.L.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.403-406,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
40.

Conference Proceedings
Conference Proceedings
40. Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
Blanque, S. ; Perez, R. ; Godignon, P. ; Mestres, N. ; Morvan, E. ; Kerlain, A. ; Dua, C. ; Brylinski, C. ; Zielinski, M. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.893-896,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
41.

Conference Proceedings
Conference Proceedings
41. Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction
Camassel, J. ; Peyre, H. ; Brink, D.J. ; Zielinski, M. ; Blanque, S. ; Mestres, N. ; Godignon, P.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.941-944,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
42.

Conference Proceedings
Conference Proceedings
42. Growth at High Rates and Characterization of Bulk 3C-SiC Material
Ferro, G. ; Balloud, C. ; Juillaguet, S. ; Vicente, P. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.115-118,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
43.

Conference Proceedings
Conference Proceedings
43. Flash Lamp Supported Deposition of 3C-SiC (FLASiC) ? a Promising Technique to Produce High Quality Cubic SiC Layers
Skorupa, W. ; Panknin, D. ; Anwand, W. ; Voelskow, M. ; Ferro, G. ; Monteil, Y. ; Leycuras, A. ; Pezoldt, J. ; McMahon, R. ; Smith, M. ; Camassel, J. ; Stoemenos, J. ; Polychroniadis, E. ; Godignon, P. ; Mestres, N. ; Turover, D. ; Rushworth, S. ; Friedberger, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.175-180,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
44.

Conference Proceedings
Conference Proceedings
44. Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Chassagne, T. ; Ferro, G. ; Wang, H. ; Stoemenos, Y. ; Peyre, H. ; Contreras, S. ; Camassel, J. ; Monteil, Y. ; Ghyselen, B.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.343-346,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
45.

Conference Proceedings
Conference Proceedings
45. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1435-1438,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
46.

Conference Proceedings
Conference Proceedings
46. Infrared Investigation of Implantation Damage in 6H-SiC
Camassel, J. ; Wang, H. ; Pernot, J. ; Godignon, P. ; Mestres, N. ; Pascual, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.859-862,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
47.

Conference Proceedings
Conference Proceedings
47. Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates
Blanc, C. ; Sartel, C. ; Souliere, V. ; Juillaguet, S. ; Monteil, Y. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.237-240,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
48.

Conference Proceedings
Conference Proceedings
48. Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems
Sartel, C. ; Balloud, C. ; Souliere, V. ; Juillaguet, S. ; Dazord, J. ; Monteil, Y. ; Camassel, J. ; Rushworth, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.217-220,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
49.

Conference Proceedings
Conference Proceedings
49. Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)
Ferro, G. ; Camassel, J. ; Juillaguet, S. ; Balloud, C. ; Polychroniadis, E.K. ; Stoimenos, Y. ; Seigle-Ferrand, P. ; Dazord, J. ; Monteil, Y. ; Rushworth, S.A. ; Smith, L.M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.281-284,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
50.

Conference Proceedings
Conference Proceedings
50. Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
Vicente, P. ; Pernot, E. ; Chaussende, D. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.729-732,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393