1.

Conference Proceedings
Conference Proceedings
1. Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC I.ayers
Blanque, S. ; Perez, R. ; Mestres, N. ; Contreras, S. ; Camassel, J. ; Godignon, P.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.795-798,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Process Optimisation for <11-2> 4H-SiC MOSFET Applications
Blanc, C. ; Tournier, D. ; Godignon, P. ; Brink, D.J. ; Souliere, V. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1051-1054,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces
Perez-Tomas, A. ; Godignon, P. ; Camassel, J. ; Mestres, N. ; Souliere, V.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1047-1050,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Infrared Investigation of Implantation Damage in 6H-SiC
Camassel, J. ; Wang, H. ; Pernot, J. ; Godignon, P. ; Mestres, N. ; Pascual, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.859-862,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
Blanque, S. ; Lyonnet, J. ; Camassel, J. ; Perez, R. ; Terziyska, P. ; Contreras, S. ; Godignon, P. ; Mestres, N. ; Pascual, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.645-648,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. SiC Base Micro-Probe for Myocardial Ischemia Monitoring
Pascual, J. ; Valvo, F. ; Godignon, P. ; Aguilo, J. ; Millan, J. ; Camassel, J. ; Mestres, N.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1483-1486,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
Blanque, S. ; Perez, R. ; Godignon, P. ; Mestres, N. ; Morvan, E. ; Kerlain, A. ; Dua, C. ; Brylinski, C. ; Zielinski, M. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.893-896,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
8.

Conference Proceedings
Conference Proceedings
8. Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction
Camassel, J. ; Peyre, H. ; Brink, D.J. ; Zielinski, M. ; Blanque, S. ; Mestres, N. ; Godignon, P.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.941-944,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
9.

Conference Proceedings
Conference Proceedings
9. Flash Lamp Supported Deposition of 3C-SiC (FLASiC) ? a Promising Technique to Produce High Quality Cubic SiC Layers
Skorupa, W. ; Panknin, D. ; Anwand, W. ; Voelskow, M. ; Ferro, G. ; Monteil, Y. ; Leycuras, A. ; Pezoldt, J. ; McMahon, R. ; Smith, M. ; Camassel, J. ; Stoemenos, J. ; Polychroniadis, E. ; Godignon, P. ; Mestres, N. ; Turover, D. ; Rushworth, S. ; Friedberger, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.175-180,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. Infrared Investigation of Implantation Damage in 6H-SiC
Camassel, J. ; Wang, H. ; Pernot, J. ; Godignon, P. ; Mestres, N. ; Pascual, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.859-862,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393