1.

Conference Proceedings
Conference Proceedings
1. Interfacial and Electrical Characterization of HfO2-Gated MOSCs and MOSFETs by C-V and Gated-Diode Method
S. Chen ; H. Chen ; C. Chen ; F. Chiu ; C. Liu
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.131-138,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
2.

Conference Proceedings
Conference Proceedings
2. Interface Characterization of CeO2-Gated MOSFETs Using Gated Diode Method and Charge Pumping Technique
F. Chiu ; H. Chen ; C. Chen ; C. Liu ; S. Chen
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.423-432,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
3.

Conference Proceedings
Conference Proceedings
3. Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD)
V. S. Chang ; Y. Hou ; P. Hau ; P. Lim ; L. Yao ; F. Yen ; C. Hung ; H. Lin ; J. Jiang ; Y. Jin ; C. Chen ; H. Tao ; S. Chen ; S. Jang ; M. Liang
Pub. info.: Atomic layer deposition : at the 208th ECS Meeting, October 16-21, 2005, Los Angeles, California, USA.  pp.113-124,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(10)