1.

Conference Proceedings
Conference Proceedings
1. Interfacial and Electrical Characterization of HfO2-Gated MOSCs and MOSFETs by C-V and Gated-Diode Method
S. Chen ; H. Chen ; C. Chen ; F. Chiu ; C. Liu
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.131-138,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
2.

Conference Proceedings
Conference Proceedings
2. Interface Characterization of CeO2-Gated MOSFETs Using Gated Diode Method and Charge Pumping Technique
F. Chiu ; H. Chen ; C. Chen ; C. Liu ; S. Chen
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.423-432,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)