1.

Conference Proceedings
Conference Proceedings
1. A Microspectroscopic Study of Cap Damage in Annealed RE-Doped AlN-Capped GaN
Nogales, E. ; Lorenz, K. ; Wang, K. ; Roqan, I. S. ; Martin, R. W. ; O'Donnell, K. P. ; Alves, E. ; Ruffenach, S. ; Briot, O.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.625-630,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
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Conference Proceedings
Conference Proceedings
2. Processing of Rare Earth Doped GuN With Ion Beams
Lorenz, K. ; Wahl, U. ; Alves, E. ; Wojtowicz, T. ; Ruterana, P. ; Dalmasso, S. ; Martin, R.W. ; O'Donnell, K.P. ; Ruffenach, S. ; Briot, O. ; Vantomme, A.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.453-458,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
3.

Conference Proceedings
Conference Proceedings
3. High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications
Moret, M. ; Ruffenach, S. ; Briot, O. ; Gil, B. ; Aulombard, R. L.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.233-238,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
4.

Conference Proceedings
Conference Proceedings
4. Modeling of Nitride Semiconductor Based Double Heterostructure Tunnel Diodes
Moret, M. ; Ruffenach, S. ; Briot, O. ; Aulombard, R. L.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.227-232,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764