1.

Conference Proceedings
Conference Proceedings
1. Al and Al/C High Dose Implantation in 4H-SiC
Bluet, J. M. ; Pernot, J. ; Billon, T. ; Contreras, S. ; Michaud, J. F. ; Robert, J. L. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.885-888,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
2.

Conference Proceedings
Conference Proceedings
2. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1435-1438,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping
Terziyska, P. ; Pernot, J. ; Contreras, S. ; Robert, J.L. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.399-402,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
4.

Conference Proceedings
Conference Proceedings
4. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1435-1438,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393