1.

Conference Proceedings
Conference Proceedings
1. Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
Thuaire, A. ; Henry, A. ; Magnusson, B. ; Bergman, J.P. ; Chen, W.M. ; Janzen, E. ; Mermoux, M. ; Bano, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.461-464,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. INTRINSIC LUMINESCENCE OF GaAs/A1GaAs HETEROJUNCTIONS INA TRANSVERSE ELECTRIC FIELD
Zhao, Q.X. ; Bergman, J.P. ; Holtz, P.O. ; Monemar, B. ; Hallin, C. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.337-342,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
3.

Conference Proceedings
Conference Proceedings
3. DECAY MEASUREMENTS OF FRE AND BOUND EXCITON RECOMBINATION IN DOPED GaAs/GaA1As QUANTUM WELLS
Bergman, J.P. ; Holtz, P.O. ; Monemar, B. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.325-330,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
4.

Conference Proceedings
Conference Proceedings
4. TIME RESOLVED MEASUREMENTS OF RADIATIVE RECOMBINATION IN GaAs/A1GaAs HETEROSTRUCTURES
Bergman, J.P. ; Zhao, Q.X. ; Holtz, P.-O. ; Monemar, B. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.
Pub. info.: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.703-706,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 160
5.

Conference Proceedings
Conference Proceedings
5. Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates
ul Hassan, J. ; Hallin, C. ; Bergman, J.P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.183-186,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Sumakeris, J.J. ; Bergman, J.P. ; Das, M.K. ; Hallin, C. ; Hull, B.A. ; Janzen, E. ; Lendenmann, H. ; O'Loughlin, M.J. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H.,Jr
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.141-146,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Optical Properties of Some GaAs-Based Quantum Structures with Excess Carriers
Holtz, P.O ; Wongmnerod, S. ; Sernelius, B. ; Pozina, G. ; Bergman, J.P. ; Madsen, L.D. ; McCaffrey, J.P. ; Reginski, K. ; bugajski, M. ; Godlewski, M. ; thordson, J. ; Andersson, T.G.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.145-156,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
8.

Conference Proceedings
Conference Proceedings
8. Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
Persson, P.O.A. ; Jacobson, H. ; Molina-Aldareguia, J.M. ; Bergman, J.P. ; Tuomi, T. ; Clegg, W.J. ; Janzen, E. ; Hultman, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.423-426,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
Lendenmann, H. ; Dahlquist, F. ; Johansson, N. ; Soederholm, R. ; Nilsson, P.A. ; Bergman, J.P. ; Skytt, P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.727-730,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
Lendenmann, H. ; Dahlquist, F. ; Bergman, J.P. ; Bleichner, H. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1259-1264,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. Proton Irradiation Induced Defects in 4H-SiC
Storasta, L. ; Carlsson, F.H.C. ; Sridhara, S.G. ; Aberg, D. ; Bergman, J.P. ; Hallen, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.431-434,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
12.

Conference Proceedings
Conference Proceedings
12. Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells
Monemar, B. ; Paskov, P.P. ; Bergman, J.P. ; Pozina, G. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.501-508,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
13.

Conference Proceedings
Conference Proceedings
13. Characterisation and Defects in Silicon Carbide
Bergman, J.P. ; Jakobsson, H. ; Storasta, L. ; Carlsson, F.H.C. ; Magnusson, B. ; Sridhara, S.G. ; Pozina, G. ; Lendenmann, H. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.9-14,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
14.

Conference Proceedings
Conference Proceedings
14. Neutron Irradiation of 4H SiC
Carlsson, F.H.C. ; Storasta, L. ; Magnusson, B. ; Bergman, J.P. ; Skoeld, K. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.555-558,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
15.

Conference Proceedings
Conference Proceedings
15. Doping of Silicon Carbide by Ion Implantation
Svensson, B.G. ; Hallen, A. ; Linnarsson, M.K. ; Kuznetsov, A.Yu. ; Janson, M.S ; Aberg, D. ; Oesterman, J. ; Persson, P.O.A. ; Hultman, L. ; Storasta, L. ; Carlsson, F.H.C. ; Bergman, J.P. ; Jagadish, C. ; Morvan, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.549-554,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
16.

Conference Proceedings
Conference Proceedings
16. Electrical Activity of Residual Boron in Silicon Carbide
Storasta, L. ; Bergman, J.P. ; Hallin, C. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.549-552,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
17.

Conference Proceedings
Conference Proceedings
17. Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
Lendenmann, H. ; Bergman, J.P. ; Dahlquist, F. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.901-906,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
18.

Conference Proceedings
Conference Proceedings
18. Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes
Jacobson, H. ; Bergman, J.P. ; Hallin, C. ; Tuomi, T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.913-916,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
19.

Conference Proceedings
Conference Proceedings
19. Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC
Storasta, L. ; Henry, A. ; Bergman, J.P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.469-472,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
20.

Conference Proceedings
Conference Proceedings
20. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
Bergman, J.P. ; Lendenmann, H. ; Nilsson, P.A. ; Lindefelt, U. ; Skytt, P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.299-302,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
21.

Conference Proceedings
Conference Proceedings
21. Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes
Bergman, J.P. ; Pozina, G. ; Monemar, B. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1493-1496,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
22.

Conference Proceedings
Conference Proceedings
22. Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
Sridhara, S.G. ; Carlsson, F.H.C. ; Bergman, J.P. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.377-380,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
23.

Conference Proceedings
Conference Proceedings
23. Characterisation and Defects in Silicon Carbide
Bergman, J.P. ; Jakobsson, H. ; Storasta, L. ; Carlsson, F.H.C. ; Magnusson, B. ; Sridhara, S. ; Pozina, G. ; Lendenmann, H. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.9-14,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
24.

Conference Proceedings
Conference Proceedings
24. Electron Irradiation of 4H SiC by TEM: An Optical Study
Sridhara, S.G. ; Persson, P.O.Å. ; Carlsson, F.H.C. ; Bergman, J.P. ; Janzen, E. ; Evans, G. ; Steeds, J.W.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
25.

Conference Proceedings
Conference Proceedings
25. Photoluminescence Up-Conversion Processes in SiC
Wagner, Mt. ; Ivanov, I.G. ; Storasta, L. ; Bergman, J.P. ; Magnusson, B. ; Chen, W.M. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.309-312,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
26.

Conference Proceedings
Conference Proceedings
26. SiC Crystal Growth by HTCVD
Ellison, A. ; Magnusson, B. ; Sundqvist, B. ; Pozina, G. ; Bergman, J.P. ; Janzen, E. ; Vehanen, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.9-14,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
27.

Conference Proceedings
Conference Proceedings
27. Dll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
Carlsson, F.H.C. ; Sridhara, S.G. ; Hallen, A. ; Bergman, J.P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.345-348,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
28.

Conference Proceedings
Conference Proceedings
28. Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC
Storasta, L. ; Magnusson, B. ; Henry, A. ; Linnarsson, M.K. ; Bergman, J.P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.423-426,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
29.

Conference Proceedings
Conference Proceedings
29. Electrical Activity of Residual Boron in Silicon Carbide
Storasta, L. ; Bergman, J.P. ; Hallin, C. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.549-552,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
30.

Conference Proceedings
Conference Proceedings
30. Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC
Magnusson, B. ; Bergman, J.P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.301-304,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
31.

Conference Proceedings
Conference Proceedings
31. Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes
Bergman, J.P. ; Pozina, G. ; Monemar, B. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1493-1496,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
32.

Conference Proceedings
Conference Proceedings
32. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
Lendenmann, H. ; Dahlquist, F. ; Bergman, J.P. ; Bleichner, H. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1259-1264,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
33.

Conference Proceedings
Conference Proceedings
33. Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
Pozina, G. ; Bergman, J.P. ; Monemar, B. ; Iwaya, M. ; Nitta, S. ; Amano, H. ; Akasaki, I.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.791-794,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
34.

Conference Proceedings
Conference Proceedings
34. Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
Persson, P.O.A. ; Jacobson, H. ; Molina-Aldareguia, J.M. ; Bergman, J.P. ; Tuomi, T. ; Clegg, W.J. ; Janzen, E. ; Hultman, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.423-426,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
35.

Conference Proceedings
Conference Proceedings
35. Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
Sundqvist, B. ; Ellison, A. ; Jonsson, A. ; Henry, A. ; Hallin, C. ; Bergman, J.P. ; Magnusson, B. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.21-24,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
36.

Conference Proceedings
Conference Proceedings
36. Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
Monemar, B. ; Paskov, P.P. ; Haratizadeh, H. ; Pozina, G.R. ; Bergman, J.P. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: 10th International Symposium on Nanostructures: Physics and Technology.  pp.63-67,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5023