1.

Conference Proceedings
Conference Proceedings
1. Critical States of Stress Evolution in Silicon Structures of ULSI with Shallow Trench Isolation
Peidous, I.V. ; Balasubramanian, N. ; Johnson, E. ; Gan, C.H. ; Sundaresan, R.
Pub. info.: ULSI process integration : proceedings of the first international symposium.  pp.243-254,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-18
2.

Conference Proceedings
Conference Proceedings
2. Gate Oxide Thinning in MOS Structures with Shallow Trench Isolation
Balasubramanian, N. ; Johnson, E. ; Perera, C. ; Mian, C.-S. ; Sheng, T.-T. ; Peidous, I.V. ; Ping, C. ; Cuthbertson, A. ; Sundaresan, R.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.125-130,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2
3.

Conference Proceedings
Conference Proceedings
3. Threshold Stresses of Dislocation Generation Onset in Silicon
Peidous, I.V. ; Loiko, K.V. ; Balasubramanian, N. ; Schuelke, T.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.180-188,  2000.  Bellingham, Wash..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-17