1.

Conference Proceedings
Conference Proceedings
1. GaN Power Devices
Pearton, S.J. ; Ren, F. ; Zhang, A.P. ; Dang, G. ; Cac, X.A. ; Lee, K.P. ; Cho, H. ; Gila, B.P. ; Johnson, J.W. ; Monier, C. ; Abernathy, C.R. ; Han, J. ; Baca, A.G. ; Chyi, J.-I. ; Lee, C.-M. ; Nee, T.-E. ; Chuo, C.-C. ; Chi, G.C. ; Chu, S.N.G.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.99-113,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
2.

Conference Proceedings
Conference Proceedings
2. Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors
Li, N.Y ; Chang, P C. ; Baca, A.G. ; Laroche, J.R. ; Ren, F ; Annou, E. ; Sharps, P R. ; Hou, H.Q.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.69-81,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
3.

Conference Proceedings
Conference Proceedings
3. Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP Applications
Chang, P.C. ; Baca, A.G. ; Klem, J.F. ; Hafich, M.J. ; Ashby, C.I.H. ; Hietala, V.M.
Pub. info.: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) : proceedings of the thirty-first symposium.  pp.177-184,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-17
4.

Conference Proceedings
Conference Proceedings
4. Non-Crystallographic Wet Etching of Gallium Arsenide
Baca, A.G. ; Laroche, J.R. ; Chang, P.C. ; Ren, F.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.15-21,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
5.

Conference Proceedings
Conference Proceedings
5. GaN Metal Oxide Semiconductor Field Effect Transistors
Ren, F. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Cheng, P. ; Han, J. ; Shul, R.J. ; Chu, S.N.G. ; Hong, M. ; Lothian, J.R.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.169-173,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
6.

Conference Proceedings
Conference Proceedings
6. The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Chang, P.C. ; Li, N.Y. ; Baca, A.G. ; Monie, C. ; Larnche, J.R. ; Hou, H.Q. ; Ren, F ; Pearton, S.J.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.192-197,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
7.

Conference Proceedings
Conference Proceedings
7. GaAs Self-Aligned JFETs with Carbon-Doped p+ Region
Baca, A.G. ; Chang, P.-C. ; Allerman, A.A. ; Drummond, T.J.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.155-160,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
8.

Conference Proceedings
Conference Proceedings
8. AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances
Monier, C. ; Baca, A.G. ; Pearton, S.J. ; Ren, F. ; Chang, P.C. ; Zhang, L. ; LaRoche, J.R. ; Han, J. ; Shut, R.J.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.34-42,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
9.

Conference Proceedings
Conference Proceedings
9. DC and Microwave Characteristics of 100 V GaAs/AlGaAs HBTs
Baca, A.G. ; Chang, P.C. ; Klem, J.F. ; Ashby, C.I.H. ; Martin, D.C.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.128-138,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
10.

Conference Proceedings
Conference Proceedings
10. *Temperature Effect of Metal contacts on GaN
Ren, F. ; Chu, S.N.G. ; Lothian, J.R. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Han, J. ; Schurman, M.J. ; Hong, M. ; Cao, X.A. ; Gila, B.P. ; Ake, T.M.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.201-207,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
11.

Conference Proceedings
Conference Proceedings
11. Annealing Behavior of Ar Implanted GaN
Luo, B. ; Johnson, J.W. ; Ren, F. ; Allums, K.K. ; Abernathy, C.R. ; Pearton, S.J. ; Dwivedi, R. ; Fogarty, TN ; Wilkins, R. ; Dabiran, A.M ; Wowchack, A.M. ; Polley, C.J. ; Chow, P.P. ; Baca, A.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.198-206,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
12.

Conference Proceedings
Conference Proceedings
12. Device Characteristics of the PnP AlGaAs/InGaAsN/GaAs Double Heterojunction Bipolar Transistor
Chang, P.C. ; Li, N.Y. ; Laroche, J.R. ; Baca, A.G. ; Hou, H.Q. ; Ren, F.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.305-312,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
13.

Conference Proceedings
Conference Proceedings
13. ION BEAM INDUCED INTERMIXING OF WSi0.45 oN GaAS
Pearton, S.J. ; Short, K.T. ; Jones, K.S. ; Baca, A.G. ; Wu, C.S.
Pub. info.: Processing and characterization of materials using ion beams : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A..  pp.249-254,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 128
14.

Conference Proceedings
Conference Proceedings
14. Wet Oxidation of AlGaAs: Arsenic Barriers on the Road to MIS
Ashby, C.I.H. ; Sullivan, J.P. ; Newcomer, P.P. ; Missert, N.A. ; Hou, H.Q. ; Hammons, B.E. ; Baca, A.G.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.58-65,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
15.

Conference Proceedings
Conference Proceedings
15. 0.5 μm E/D AlGaAs/GaAs Heterostructure Field Effect Transistor Technology with DEFT Threshold Adjust Implant
Baca, A.G. ; Sherwin, M.E. ; Zolper, J.C. ; Shul, R.J. ; Briggs, R.D. ; Heise, J.A. ; Robertson, P.J. ; Hafich, M.F.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.186-189,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
16.

Conference Proceedings
Conference Proceedings
16. GaAs-Based JFET and PHEMT Technologies for Ultra-Low-Power Microwave Circuits Operating at Frequencies up to 2.4 GHz
Baca, A.G. ; Hietala, V.M. ; Greenway, D. ; Zolper, J.C. ; Sherwin, M.S. ; Shul, R.J. ; Hafich, M.J.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.443-449,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
17.

Conference Proceedings
Conference Proceedings
17. InGaAs/InP Heterojunction Bipolar Transistors for Ultra Low Power Circuit Applications
Chang, P.C. ; Baca, A.G. ; Hafich, M.J. ; Ashby, C.I.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.98-103,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
18.

Conference Proceedings
Conference Proceedings
18. Design Investigation of InGaAsN-based Pnp Heteroj unction Bipolar Transistors *
Monier, C. ; Chang, P.C. ; Baca, A.G. ; Li, N.Y. ; Larache, J.R. ; Hou, H.Q. ; Ren, F. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.293-299,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
19.

Conference Proceedings
Conference Proceedings
19. Orientation and Dielectric Overlayer Effects in InGaP/GaAs HBTs *
Baca, A.G. ; Monier, C. ; Chang, P.C. ; Armendariz, M.G. ; Briggs, R.D. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.300-304,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
20.

Conference Proceedings
Conference Proceedings
20. High-density plasma-induced etch damage of GaN
Shul, R.J. ; Zhang, L. ; Baca, A.G. ; Willison, C.G. ; Han, J. ; Pearton, S.J. ; Ren, F. ; Zolper, J.C. ; Lester, L.F.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.271-280,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
21.

Conference Proceedings
Conference Proceedings
21. Complementary GaAs Junction-Gated Heterostructure Field Effect Transistor Fabrication for Integrated Circuits
Baca, A.G. ; Zolper, J.C. ; Sherwin, M.E. ; Robertson, P.J. ; Shul, R.J. ; Howard, A.J. ; Rieger, D.J. ; Klem, J.F.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.214-223,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34
22.

Conference Proceedings
Conference Proceedings
22. GaN pnp Bipolar Junction Transistors Operated To 250℃
Zhang, A.P. ; Dang, G. ; Ren, F. ; Han, J. ; Monier, C. ; Baca, A.G. ; Cao, X.A. ; Cho, H. ; Abernathy, C.R. ; Pearton, S.J.
Pub. info.: Wide-bandgap electronic devices.  pp.T3.2-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
23.

Conference Proceedings
Conference Proceedings
23. Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs
Shul, Randy J. ; Zhang, L. ; Baca, A.G. ; Willison, Christi G. ; Hans, J. ; Pearton, S.J. ; Lee, K.P. ; Ren, F.
Pub. info.: Wide-bandgap electronic devices.  pp.T7.5-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
24.

Conference Proceedings
Conference Proceedings
24. Device Processing For GaN High Power Electronics
Pearton, Stephen J. ; Cao, X.A. ; Cho, H. ; Lee, K.P. ; Monier, C. ; Ren, F. ; Dang, G. ; Zhang, A.P. ; Johnson, W. ; LaRoche, J.R. ; Gila, B.P. ; Abernathy, C.R. ; Shul, R.J. ; Baca, A.G. ; Han, J. ; Chyi, J.-I. ; Van Hove, J.M.
Pub. info.: Wide-bandgap electronic devices.  pp.T7.1-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
25.

Conference Proceedings
Conference Proceedings
25. Determination of AlGaN/GaN HFET Electric Fields Using Electroreflectance
Kurtz, S.R. ; Allerman, A.A. ; Koleske, D.D. ; Baca, A.G. ; Briggs, R.D.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.597-602,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
26.

Conference Proceedings
Conference Proceedings
26. III-Nitride ion implantation and device processing
Zolper, J.C. ; Shul, R.J. ; Baca, A.G. ; Pearton, S.J. ; Abernathy, C.R. ; Wilson, R.G. ; Stall, R.A. ; Shur, M.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.149-158,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
27.

Conference Proceedings
Conference Proceedings
27. MOCVD Grown InGaAsN Using efficent and Novel Precursor, Tertibutylhydrazine, for optoelectronic device applications. (Invited)
Li, N.V. ; Sharps, P.R. ; Newman, F. ; Chang, P.C. ; Baca, A.G. ; Hou, H.Q.
Pub. info.: State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium.  pp.17-22,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-20
28.

Conference Proceedings
Conference Proceedings
28. High Performance GaN/AIGaN HEMTs (Invited)
Baca, A.G. ; Briggs, R.D. ; Johnson, J.W. ; Monier, C. ; Allerman, A.A. ; Mitchell, C.C. ; Wendt, J.R. ; Shul, R.J. ; Ren, F. ; Armendariz, M.G.
Pub. info.: State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium.  pp.41-46,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-20
29.

Conference Proceedings
Conference Proceedings
29. High-Speed Performance of NpN InGaAsN-based double Heterojunction Bipolar Transistor (Invited)
Monier, C. ; Baca, A.G. ; Chang, P.C. ; Newman, F. ; Li, N.Y. ; Armour, E. ; Briggs, R.D. ; Hou, H.Q.
Pub. info.: State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium.  pp.62-69,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-20
30.

Conference Proceedings
Conference Proceedings
30. Dry Etch Development of W/WSi Short Gate MESFETs
Shul, R.J. ; Sherwin, M.E. ; Baca, A.G. ; Zolper, J.C. ; Rieger, D.J. ; Briggs, R.D.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.162-174,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2
31.

Conference Proceedings
Conference Proceedings
31. The Role of AlN Encapsulation of GaN During Implant Activation Annealing
Zolper, J.C. ; Pearton, S.J. ; Rieger, D.J. ; Baca, A.G. ; Lee, J.W. ; Vartulli, C.R. ; Stall, R.A.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.244-248,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
32.

Conference Proceedings
Conference Proceedings
32. High-Frequency Operation of 0.3 μm GaAs JFETs for Low-Power Electronics
Zolper, J.C. ; Baca, A.G. ; Hietala, V.M. ; Shul, R.J. ; Sherwin, M.E.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.101-106,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
33.

Conference Proceedings
Conference Proceedings
33. ICP Etching of GaAs Via Hole Contacts
Shul, R.J. ; Baca, A.G. ; Briggs, R.D. ; McClellan, G.B. ; Pearton, S.J. ; Constantine, C.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.84-92,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
34.

Conference Proceedings
Conference Proceedings
34. Ion Implantation Processing for High-Speed GaAs JFETS
Zolper, J.C. ; Baca, A.G. ; Sherwin, M.E. ; Shul, R.J.
Pub. info.: Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII).  pp.198-208,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-6
35.

Conference Proceedings
Conference Proceedings
35. GaAs Integrated Circuit Process Characterization and Nondestructive Process Monitoring by AFM
Baca, A.G. ; Howard, A.J. ; Shul, R.J. ; Zoiper, J.C. ; Rieger, D.J.
Pub. info.: Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII).  pp.63-70,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-6
36.

Conference Proceedings
Conference Proceedings
36. Ion Implantation in Compound Semiconductors for High-Performance Electronic Devices
Zolper, J.C. ; Baca, A.G. ; Sherwin, M.E. ; Klem, J.F.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.142-153,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2