1.

Conference Proceedings
Conference Proceedings
1. Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP Applications
Chang, P.C. ; Baca, A.G. ; Klem, J.F. ; Hafich, M.J. ; Ashby, C.I.H. ; Hietala, V.M.
Pub. info.: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) : proceedings of the thirty-first symposium.  pp.177-184,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-17
2.

Conference Proceedings
Conference Proceedings
2. Non-Crystallographic Wet Etching of Gallium Arsenide
Baca, A.G. ; Laroche, J.R. ; Chang, P.C. ; Ren, F.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.15-21,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
3.

Conference Proceedings
Conference Proceedings
3. The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Chang, P.C. ; Li, N.Y. ; Baca, A.G. ; Monie, C. ; Larnche, J.R. ; Hou, H.Q. ; Ren, F ; Pearton, S.J.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.192-197,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
4.

Conference Proceedings
Conference Proceedings
4. AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances
Monier, C. ; Baca, A.G. ; Pearton, S.J. ; Ren, F. ; Chang, P.C. ; Zhang, L. ; LaRoche, J.R. ; Han, J. ; Shut, R.J.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.34-42,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
5.

Conference Proceedings
Conference Proceedings
5. DC and Microwave Characteristics of 100 V GaAs/AlGaAs HBTs
Baca, A.G. ; Chang, P.C. ; Klem, J.F. ; Ashby, C.I.H. ; Martin, D.C.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.128-138,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
6.

Conference Proceedings
Conference Proceedings
6. Device Characteristics of the PnP AlGaAs/InGaAsN/GaAs Double Heterojunction Bipolar Transistor
Chang, P.C. ; Li, N.Y. ; Laroche, J.R. ; Baca, A.G. ; Hou, H.Q. ; Ren, F.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.305-312,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
7.

Conference Proceedings
Conference Proceedings
7. InGaAs/InP Heterojunction Bipolar Transistors for Ultra Low Power Circuit Applications
Chang, P.C. ; Baca, A.G. ; Hafich, M.J. ; Ashby, C.I.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.98-103,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
8.

Conference Proceedings
Conference Proceedings
8. Design Investigation of InGaAsN-based Pnp Heteroj unction Bipolar Transistors *
Monier, C. ; Chang, P.C. ; Baca, A.G. ; Li, N.Y. ; Larache, J.R. ; Hou, H.Q. ; Ren, F. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.293-299,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
9.

Conference Proceedings
Conference Proceedings
9. Orientation and Dielectric Overlayer Effects in InGaP/GaAs HBTs *
Baca, A.G. ; Monier, C. ; Chang, P.C. ; Armendariz, M.G. ; Briggs, R.D. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.300-304,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
10.

Conference Proceedings
Conference Proceedings
10. MOCVD Grown InGaAsN Using efficent and Novel Precursor, Tertibutylhydrazine, for optoelectronic device applications. (Invited)
Li, N.V. ; Sharps, P.R. ; Newman, F. ; Chang, P.C. ; Baca, A.G. ; Hou, H.Q.
Pub. info.: State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium.  pp.17-22,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-20