1.

Conference Proceedings
Conference Proceedings
1. Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules
B. Raghothamachar ; Y. Yang ; R. Dalmau ; B. Moody ; S. Craft
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.91-94,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers
Y. Yang ; J. Guo ; O.Y. Goue ; B. Raghothamachar ; M. Dudley
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.105-108,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
H. Wang ; F. Wu ; Y. Yang ; J. Guo ; B. Raghothamachar
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.319-322,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC
H.H. Wang ; S. Byrappa ; F. Wu ; B. Raghothamachar ; M. Dudley
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.327-330,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
F.Z. Wu ; H.H. Wang ; S. Byrappa ; B. Raghothamachar ; M. Dudley
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.343-346,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT-Grown Substrates with Associated Stacking Faults
S. Byrappa ; F.Z. Wu ; H.H. Wang ; B. Raghothamachar ; G. Choi
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.347-350,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
7.

Conference Proceedings
Conference Proceedings
7. Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
M. Dudley ; H.H. Wang ; F.Z. Wu ; S. Byrappa ; B. Raghothamachar
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.269-272,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
8.

Conference Proceedings
Conference Proceedings
8. Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics
B. Raghothamachar ; R. Dalmau ; B. Moody ; S. Craft ; R. Schlesser
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1287-1290,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
9.

Conference Proceedings
Conference Proceedings
9. Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography
O.Y. Goue ; Y. Yang ; J.Q. Guo ; B. Raghothamachar ; M. Dudley
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.297-300,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
10.

Conference Proceedings
Conference Proceedings
10. Effects of Dislocations and Sub-grain Boundaries on X-ray Response Maps of CdZnTe Radiation Detectors
A. Hossain ; A. E. Bolotnikov ; G. S. Camarda ; Y. Cui ; R. Gul ; K. Kim ; B. Raghothamachar ; G. Yang ; R. B. James
Pub. info.: Nuclear radiation detection materials--2011 : symposium held April 25-29 2011, San Francisco, California, U.S.A..  pp.61-66,  2012.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1341
11.

Conference Proceedings
Conference Proceedings
11. Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
F.Z. Wu ; H.H. Wang ; Y. Yang ; J.Q. Guo ; B. Raghothamachar
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.85-89,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
12.

Conference Proceedings
Conference Proceedings
12. Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
M. Dudley ; N. Zhang ; Y. Zhang ; B. Raghothamachar ; E.K. Sanchez
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.295-298,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
13.

Conference Proceedings
Conference Proceedings
13. Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography
H.H. Wang ; F.Z. Wu ; M. Dudley ; B. Raghothamachar ; G. Chung
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.328-331,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
14.

Conference Proceedings
Conference Proceedings
14. Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer
H.H. Wang ; F.Z. Wu ; S.Y. Byrapa ; Y. Yang ; B. Raghothamachar
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.332-337,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
15.

Conference Proceedings
Conference Proceedings
15. Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals
M. Dudley ; S. Byrappa ; H. Wang ; F. Wu ; Y. Zhang ; B. Raghothamachar ; G. Choi ; E.K. Sanchez ; D. Hansen ; R. Drachev ; M.J. Loboda
Pub. info.: Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California.  pp.29-36,  2010.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1246
16.

Conference Proceedings
Conference Proceedings
16. Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
Y. Yang ; J.Q. Guo ; B. Raghothamachar ; M. Dudley ; G. Chung ; E. Sanchez ; I. Manning
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.209-213,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
17.

Conference Proceedings
Conference Proceedings
17. Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
M. Dudley ; N. Zhang ; Y. Zhang ; B. Raghothamachar ; S. Byrappa
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.291-294,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648