1.

Conference Proceedings
Conference Proceedings
1. RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate
Ogata, M. ; Katakami, S. ; Ono, S. ; Arai, M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1235-1238,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Demonstration of High-Power X-Band Oscillation in p+/n-/n+ 4H-SiC IMPATT Diodes with Guard-Ring Termination
Ono, S. ; Arai, M. ; Kimura, C.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.981-984,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET
Arai, M. ; Honda, H. ; Ogata, M. ; Sawazaki, H. ; Ono, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1379-1382,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. RF Characteristics of Short-Channel SiC MESFETs
Honda, H. ; Ogata, M. ; Sawazaki, H. ; Ono, S. ; Arai, M.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.745-748,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
5.

Conference Proceedings
Conference Proceedings
5. Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET
Arai, M. ; Honda, H. ; Ogata, M. ; Sawazaki, H. ; Ono, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1379-1382,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393