1.

Conference Proceedings
Conference Proceedings
1. Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing
Kinoshita, A. ; Katou, M. ; Kawasaki, M. ; Kojima, K. ; Fukuda, K. ; Arai, K. ; Morigasa, F. ; Endou, T. ; Isii, T. ; Yashima, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.835-838,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Arai, K. ; Kimura, K. ; Nakamura, K. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.211-214,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Fabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01mΩ･cm2
Tanaka, Y. ; Yano, K. ; Okamoto, M. ; Takatsuka, A. ; Fukuda, K. ; Kasuga, M. ; Arai, K. ; Yatsuo, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1219-1222,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. PREPARATION AND ELECTROCHEMICAL CHARACTERIZATION OF TRANSITION METAL OXIDE PARTICLES PREPARED IN SUPERCRITICAL WATER.
Kanamura, K. ; Umegaki, T. ; Toyoshima, K. ; Okada, K.-I. ; Hakuta, Y. ; Adschiri, T. ; Arai, K.
Pub. info.: Intercalation compounds for battery materials : proceedings of the international symposium.  pp.407-415,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-24
5.

Conference Proceedings
Conference Proceedings
5. Effects of Chemical Substances on Electrical Potential Oscillation Across an Octanol Liquid Membrane
Arai, K. ; Fukuyama, S. ; Kusu, F. ; Takamura, K.
Pub. info.: Proceedings of the fifth International Symposium on Redox Mechanisms and Interfacial Properties of Molecules of Biological Importance 1993.  pp.333-342,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-11
6.

Conference Proceedings
Conference Proceedings
6. Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
Kato, T. ; Kojima, K. ; Nishizawa, S. I. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.315-318,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
7.

Conference Proceedings
Conference Proceedings
7. 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
Kojima, K. ; Okumura, H. ; Kuroda, S. ; Arai, K. ; Ohi, A. ; Akinaga, H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.93-96,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
8.

Conference Proceedings
Conference Proceedings
8. Ground-to-OICETS laser communication experiments [6304-75]
Toyoshima, M. ; Takizawa, K. ; Kuri, T. ; Klaus, W. ; Toyoda, M. ; Kunimori, H. ; Jano. T. ; Takayama, Y. ; Kura, N. ; Ohinata, K. ; Arai, K. ; Shiratama, K.
Pub. info.: Free-space laser communications VI : 15-17 August 2006, San Diego, California, USA.  pp.63040B-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6304
9.

Conference Proceedings
Conference Proceedings
9. N+ -P JUNCTION LEAKAGE CURRENT GENERATED BY MICRO- DEFECTS IN DENUDED ZONE OF 64Mb DRAM SILICON SUBSTRATES
Horikawa, M. ; Mizutani, T. ; Suzuki, T. ; Arai, K.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.987-996,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
10.

Conference Proceedings
Conference Proceedings
10. Improvement of Plastic Workability of Rolled AZ31 Alloy Sheet by Surface Thermo-Mechanical Treatment
Yoshida, Y. ; Arai, K. ; Kamado, S. ; Kojima, Y.
Pub. info.: Magnesium-science, technology and applications : proceedings of the International Conference on Magnesium-Science, Technology and Applications September 20-24, 2004, Beijing, China.  pp.449-452,  2005.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 488-489
11.

Conference Proceedings
Conference Proceedings
11. Lifetime Control of the Minority Carrier in PiN Diodes by He+ Ion Implantation
Tanaka, Y. ; Kojima, K. ; Takao, K. ; Okamoto, M. ; Kawasaki, M. ; Takatsuka, A. ; Yatsuo, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.985-988,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
12.

Conference Proceedings
Conference Proceedings
12. OICETS on-orbit laser communication experiments (Invited Paper) [6105-36]
John, T. ; Takayama, Y. ; Kura, N. ; Ohinata, K. ; Koyama, Y. ; Shiratama ; Sodnik, Z. ; Demelenne, B. ; Bird, A. ; Arai, K.
Pub. info.: Free-space laser communication technologies XVIII : 24-25 January, 2006, San Jose, California, USA.  pp.610503-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6105
13.

Conference Proceedings
Conference Proceedings
13. Investigation of In-Grown Dislocations in 4II-SiC Epitaxial Layers
Kojima, K. ; Kato, T. ; Kuroda, S. ; Okumura, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.147-152,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
14.

Conference Proceedings
Conference Proceedings
14. Operational Design for Startup and Shutdown of Chemical Plants Based on a Topological Approach
YUJINAKA, R. Batres ; Adriani, A. ; Arai, K. ; Lu, M.L. ; Pradubsripetch, D. ; Lee, S. ; Yamada, I.
Pub. info.: AIChE 1995 SPRING MEETING -HOUSTON, TX- MARCH 19-23, 1995.  1995.  New York.  American Institute of Chemical Engineers
Title of ser.: AIChE meeting [papers]
Ser. no.: 1995
15.

Conference Proceedings
Conference Proceedings
15. Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET
Harada, S. ; Okamoto, M. ; Yatsuo, T. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.813-816,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
16.

Conference Proceedings
Conference Proceedings
16. Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping
Hatakeyama, T. ; Watanabe, T. ; Senzaki, J. ; Kato, M. ; Fukuda, K. ; Shinohe, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.829-832,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
17.

Conference Proceedings
Conference Proceedings
17. Unsupervised texture classification method using appropriate training area selection based on genetic algorithms
Okumura, H. ; Maeda, M. ; Sueyasu, H. ; Togami, Y. ; Tadanou, T. ; Arai, K.
Pub. info.: Image and signal processing for remote sensing IX : 9-12 September 2003, Barcelona, Spain.  pp.452-460,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5238
18.

Conference Proceedings
Conference Proceedings
18. Ground-to-satellite optical link tests between Japanese laser communications terminal and European geostationary satellite ARTEMIS
Toyoshima, M. ; Yamakawa, S. ; Yamawaki, T. ; Arai, K. ; Reyes, M. ; Alonso, A. ; Sodnik, Z. ; Demelenne, B.
Pub. info.: Free-space laser communication technologies XVI : 27, 29 January 2004, San Jose, California, USA.  pp.1-15,  2004.  Bellingham, Wash., USA.  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5338
19.

Conference Proceedings
Conference Proceedings
19. Automated corresponding point candidate selection for image registration using wavelet transmation, neural network with rotation invariant inputs, and context information about neighboring candidates
Okumura, H. ; Suezaki, M. ; Sueyasu, H. ; Arai, K.
Pub. info.: Image and signal processing for remote sensing VIII :24-27 September 2002, Agia Pelagia, Crete, Greece.  pp.401-410,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4885
20.

Conference Proceedings
Conference Proceedings
20. Approptiate training area selection for supervised texture classification by using the genetic aldorithms
Okumura, H. ; Maeda, M. ; Arai, K.
Pub. info.: Image and signal processing for remote sensing VIII :24-27 September 2002, Agia Pelagia, Crete, Greece.  pp.411-420,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4885
21.

Conference Proceedings
Conference Proceedings
21. 4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET
Harada, S. ; Kato, M. ; Okamoto, M. ; Yatsuo, T. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1281-1284,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
22.

Conference Proceedings
Conference Proceedings
22. Fabrication of 4H-SiC DIMOSFETs by High-Tempemture (>1400oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
Kosugi, R. ; Suzuki, K. ; Takao, K. ; Hayashi, Y. ; Yatsuo, T. ; Fukuda, K. ; Ohashi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1309-1312,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
23.

Conference Proceedings
Conference Proceedings
23. Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
Bahng, W. ; Kitou, Y. ; Nishizawa, S. ; Yamaguchi, H. ; Khan, M. N. ; Oyanagi, N. ; Arai, K. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.103-106,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
24.

Conference Proceedings
Conference Proceedings
24. Behavior of Plutonium Interacting With Bentonite and Sulfate-Reducing Anaerobic Bacteria
Kudo, A. ; Zheng, J. ; Cayer, I. ; Fujikawa, Y. ; Asano, H. ; Arai, K. ; Yoshikawa, H. ; Ito, M.
Pub. info.: Scientific basis for nuclear waste management XX : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.879-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 465
25.

Conference Proceedings
Conference Proceedings
25. A formation of SiO2/4H-SiC interface by oxidizing deposited poly-Si and high-temperature hydrogen annealing
Fukuda, H. ; Sakamoto, K. ; Nagai, K. ; Sekigawa, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.105-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
26.

Conference Proceedings
Conference Proceedings
26. Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing
Tanaka, Y. ; Tanoue, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.799-802,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
27.

Conference Proceedings
Conference Proceedings
27. A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing
Fukuda, K. ; Senzaki, J. ; Kushibe, M. ; Kojima, K. ; Kosugi, R. ; Suzuki, S. ; Harada, S. ; Suzuki, T. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1057-1060,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
28.

Conference Proceedings
Conference Proceedings
28. Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing
Senzaki, J. ; Fukuda, K. ; Kojima, K. ; Harada, S. ; Kosugi, R. ; Suzuki, S. ; Suzuki, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1061-1064,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
29.

Conference Proceedings
Conference Proceedings
29. Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing
Senzaki, J. ; Harada, S. ; Kosugi, R. ; Suzuki, S. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.795-798,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
30.

Conference Proceedings
Conference Proceedings
30. TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
Adachi, K. ; Johnson, C.M. ; Arai, K. ; Fukuda, K. ; Harada, S. ; Shinohe, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1085-1088,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
31.

Conference Proceedings
Conference Proceedings
31. Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure
Harada, S. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Adachi, K. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1069-1072,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
32.

Conference Proceedings
Conference Proceedings
32. Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface
Hatakeyama, T. ; Harada, S. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Fukuda, K. ; Shinohe, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1081-1084,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
33.

Conference Proceedings
Conference Proceedings
33. A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing
Fukuda, K. ; Senzaki, J. ; Kushibe, M. ; Kojima, K. ; Kosugi, R. ; Suzuki, S. ; Harada, S. ; Suzuki, T. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1057-1060,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
34.

Conference Proceedings
Conference Proceedings
34. Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing
Senzaki, J. ; Fukuda, K. ; Kojima, K. ; Harada, S. ; Kosugi, R. ; Suzuki, S. ; Suzuki, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1061-1064,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
35.

Conference Proceedings
Conference Proceedings
35. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
Kojima, K. ; Ohno, T. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Kushibe, M. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1053-1056,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
36.

Conference Proceedings
Conference Proceedings
36. Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs
Kosugi, R. ; Okamoto, M. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1049-1052,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
37.

Conference Proceedings
Conference Proceedings
37. Observation of SiO2/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy
Fukuda, K. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.647-650,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
38.

Conference Proceedings
Conference Proceedings
38. Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face
Fukuda, K. ; Suzuki, S. ; Senzaki, J. ; Cho, W.J. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.631-634,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
39.

Conference Proceedings
Conference Proceedings
39. Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
Fujimaki, M. ; Ono, Rudi ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Shinohe, T. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.851-854,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
40.

Conference Proceedings
Conference Proceedings
40. Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)
Ono, R. ; Fujimaki, M. ; Senzaki, J. ; Tanimoto, S. ; Shinohe, T. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.847-850,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
41.

Conference Proceedings
Conference Proceedings
41. Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance
Na, H.J. ; Kim, H.J. ; Adachi, K. ; Kiritani, N. ; Tanimoto, S. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1383-1386,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
42.

Conference Proceedings
Conference Proceedings
42. Resistivity Reduction of Thin Polycrystalline Silicon Films Crystallized from In Situ Phosphorus-Doped Amorphous Silicon Deposited Using Silane or Disilane
Oguro, S. ; Shishiguchi, S. ; Arai, K.
Pub. info.: ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology.  pp.504-511,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-5
43.

Conference Proceedings
Conference Proceedings
43. Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications
Adachi, K. ; Johnson, C.M. ; Ohashi, H. ; Shinohe, T. ; Kinoshita, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.719-722,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
44.

Conference Proceedings
Conference Proceedings
44. Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures
Fukuda, K. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Nagai, K. ; Sekigawa, T. ; Okushi, H. ; Yoshida, S. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1283-1286,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
45.

Conference Proceedings
Conference Proceedings
45. Super-Junction Device Forward Characteristics and Switched Power Limitations
Adachi, K. ; Johnson, C.M. ; Ohashi, H. ; Shinohe, T. ; Kinoshita, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1251-1254,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
46.

Conference Proceedings
Conference Proceedings
46. Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature
Senzaki, J. ; Fukuda, K. ; Imai, S. ; Tanaka, Y. ; Kobayashi, N. ; Tanoue, H. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.865-868,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
47.

Conference Proceedings
Conference Proceedings
47. Effect of Post-Oxidation-Annealing in Hydrogen on SiO2/4H-SiC Interface
Suzuki, S. ; Fukuda, K. ; Okushi, H. ; Nagai, K. ; Sekigawa, T. ; Yoshida, S. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1073-1076,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
48.

Conference Proceedings
Conference Proceedings
48. Shape of SiC Bulk Single Crystal Grown by Sublimation
Nishizawa, S. ; Kitou, Y. ; Bahng, W. ; Oyanagi, N. ; Khan, M. N. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.99-102,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
49.

Conference Proceedings
Conference Proceedings
49. High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient
Kosugi, R. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.669-672,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
50.

Conference Proceedings
Conference Proceedings
50. SiC Single Crystal Growth Rate Measurement by in-Situ Observation using the Transmission X-Ray Technique
Oyanagi, N. ; Nishizawa, S. ; Kato, T. ; Yamaguchi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.75-78,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
51.

Conference Proceedings
Conference Proceedings
51. Pressure Effect in Sublimation Growth of Bulk SiC
Kitou, Y. ; Bahng, W. ; Nishizawa, S. ; Nishino, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.83-86,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
52.

Conference Proceedings
Conference Proceedings
52. Comprehensive Study of Impact Ionization Coefficients of 4H-SiC
Hatakeyama, T. ; Watanabe, T. ; Kojima, K. ; Sano, N. ; Shinohe, T. ; Arai, K.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.157-162,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
53.

Conference Proceedings
Conference Proceedings
53. Preparation techniques and ionic transport properties of ceria-based electrolytes
Li, Guangshe ; Smith, R.L., Jr. ; Inomata, H. ; Arai, K.
Pub. info.: Ionic and mixed conducting ceramics : proceedings of the fourth international symposium.  pp.36-48,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-28
54.

Conference Proceedings
Conference Proceedings
54. Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
Kushibe, M. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Masahara, K. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.169-172,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
55.

Conference Proceedings
Conference Proceedings
55. Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
Masahara, K. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1037-1040,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
56.

Conference Proceedings
Conference Proceedings
56. Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide
Senzaki, J. ; Fukuda, K. ; Ishida, Y. ; Tanaka, Y. ; Tanoue, H. ; Kobayashi, N. ; Tanaka, T. ; Arai, K.
Pub. info.: Wide-bandgap electronic devices.  pp.T6.7-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
57.

Conference Proceedings
Conference Proceedings
57. Temperature Gradient Effect on SiC Epitaxy in Liquid Phase
Khan, M. N. ; Nishizawa, S. ; Bahng, W. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.233-236,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
58.

Conference Proceedings
Conference Proceedings
58. In-Situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
Kato, T. ; Oyanagi, N. ; Yamaguchi, H. ; Takano, Y. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.457-460,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
59.

Conference Proceedings
Conference Proceedings
59. Temperature Dependences of Channel Mobility and Threshold Voltage in 4H- and 6H-SiC MOSFETs
Harada, S. ; Kosugi, R. ; Senzaki, J. ; Suzuki, S. ; Cho, W.J. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
60.

Conference Proceedings
Conference Proceedings
60. X-Ray Topographic Study of SiC Crystal at High Temperature
Yamaguchi, H. ; Oyanagi, Na. ; Kato, T. ; Takano, Y. ; Nishizawa, S. ; Bahng, W. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.461-464,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
61.

Conference Proceedings
Conference Proceedings
61. Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
Kojima, K. ; Ohno, T. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishio, J. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.925-928,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
62.

Conference Proceedings
Conference Proceedings
62. Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs
Kosugi, R. ; Okamoto, M. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1049-1052,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
63.

Conference Proceedings
Conference Proceedings
63. High-Energy X-Ray Synchrotron Radiation Analysis of Residual-Stress Distribution of Shot-Peened Steel
Tanaka, K. ; Akiniwa, Y. ; Suzuki, K. ; Yanase, E. ; Nishio, K. ; Kusumi, Y. ; Arai, K.
Pub. info.: ECRS 6 : proceedings of the 6th European Conference on Residual Stresses, Coimbra, Portugal, 10-12 July, 2002.  pp.341-348,  2002.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 404-407
64.

Conference Proceedings
Conference Proceedings
64. Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition
Okamoto, M. ; Kosugi, R. ; Nakashima, S. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.629-632,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
65.

Conference Proceedings
Conference Proceedings
65. Single Contact-Material MESFETs on 4H-SiC
Tanimoto, S. ; Inada, M. ; Kiritani, N. ; Hoshi, M. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1221-1224,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
66.

Conference Proceedings
Conference Proceedings
66. Flux-Controlled Sublimation Growth by an Inner Guide-Tube
Kitou, Y. ; Bahng, W. ; Kato, T. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.83-86,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
67.

Conference Proceedings
Conference Proceedings
67. Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth
Nishizawa, S. ; Kato, T. ; Kitou, Y. ; Oyanagi, N. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.43-46,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
68.

Conference Proceedings
Conference Proceedings
68. Growth and Evaluation of High Quality SiC Crystal by Sublimation Method
Oyanagi, N. ; Yamaguchi, H. ; Kato, T. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.87-90,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
69.

Conference Proceedings
Conference Proceedings
69. Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
Kato, T. ; Oyanagi, N. ; Kitou, Y. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.111-114,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
70.

Conference Proceedings
Conference Proceedings
70. A Method of Reducing Micropipes in Thin Films by Using Sublimation Growth
Oyanagi, N. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.107-110,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
71.

Conference Proceedings
Conference Proceedings
71. Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
Hirose, F. ; Kitou, Y. ; Oyanagi, N. ; Kato, T. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.75-78,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
72.

Conference Proceedings
Conference Proceedings
72. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
Kojima, K. ; Ohno, T. ; Senzaki, J. ; Fukuda, K. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishino, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.195-198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
73.

Conference Proceedings
Conference Proceedings
73. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.227-230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
74.

Conference Proceedings
Conference Proceedings
74. Impact Ionization Coefficients of 4H-SiC
Hatakeyama, T. ; Watanabe, T. ; Kojima, K. ; Sano, N. ; Shiraishi, K. ; Kushibe, M. ; Imai, S. ; Shinohe, T. ; Suzuki, T. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.673-676,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
75.

Conference Proceedings
Conference Proceedings
75. Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
Nishio, J. ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Ohno, T. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.215-218,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
76.

Conference Proceedings
Conference Proceedings
76. SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
Adachi, K. ; Omura, I. ; Ono, R. ; Nishio, J. ; Shinohe, T. ; Ohashi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.887-890,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
77.

Conference Proceedings
Conference Proceedings
77. Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance
Na, H. J. ; Kim, H. J. ; Adachi, K. ; Kiritani, N. ; Tanimoto, S. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1383-1386,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
78.

Conference Proceedings
Conference Proceedings
78. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
Masahara, K. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Nishio, J. ; Kojima, K. ; Ishida, Y. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.179-182,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
79.

Conference Proceedings
Conference Proceedings
79. The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices
Adachi, K. ; Ohashi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1233-1236,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
80.

Conference Proceedings
Conference Proceedings
80. Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
Kato, T. ; Oyanagi, N. ; Yamaguchi, H. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.295-298,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
81.

Conference Proceedings
Conference Proceedings
81. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
Kojima, K. ; Ohno, T. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Kushibe, M. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1053-1056,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
82.

Conference Proceedings
Conference Proceedings
82. Observation of the Quasi-Direct Recombination in Nanocrystalline Silicon Dots by Reducing the Core Diameter
Arai, K. ; Omachi, J. ; Oda, S.
Pub. info.: Advanced luminescent materials and quantum confinement II : proceedings of the international symposium.  pp.109-122,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-9
83.

Conference Proceedings
Conference Proceedings
83. Defects induced by heavy-metal on bonded SOI wafer surfaces
Okonogi, K. ; Kikuchi, H. ; Arai, K.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.38-43,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11
84.

Conference Proceedings
Conference Proceedings
84. Fabrication of 4H-SiC Double-Epitaxial MOSFETs
Harada, S. ; Okamoto, M. ; Yatsuo, T. ; Adachi, K. ; Suzuki, K. ; Suzuki, S. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1421-1424,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
85.

Conference Proceedings
Conference Proceedings
85. Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
Ohshima, T. ; Lee, K.K. ; Ishida, Y. ; Kojima, K. ; Tanaka, Y. ; Takahashi, T. ; Yoshikawa, M. ; Okumura, H. ; Arai, K. ; Kamiya, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1405-1408,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
86.

Conference Proceedings
Conference Proceedings
86. Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
Takahashi, T. ; Ishida, Y. ; Tsuchida, H. ; Kamata, I. ; Okumura, H. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.323-326,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
87.

Conference Proceedings
Conference Proceedings
87. Homoepitaxial Growth of 4H-SiC Thin Film Below 1000oC by Microwave Plasma Chemical Vapor Deposition
Okamoto, M. ; Kosugi, R. ; Tanaka, Y. ; Takeuchi, D. ; Nakashima, S. ; Nishizawa, S. ; Fukuda, K. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.299-302,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
88.

Conference Proceedings
Conference Proceedings
88. Improvement of unsupervised texture classification based on genetic algorithms
Okumura, H. ; Togami, Y. ; Arai, K.
Pub. info.: Image and signal processing for remote sensing X : 13-15 September 2004, Maspalomas, Gran Canaria, Spain.  pp.471-480,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5573
89.

Conference Proceedings
Conference Proceedings
89. Oxygen Precipitate Distribution in Bonded SOI Wafers
Okonogi, K. ; Kikuchi, H. ; Arai, K.
Pub. info.: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding : physics and applications.  pp.290-295,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-7
90.

Conference Proceedings
Conference Proceedings
90. Growth Rate of S-Carboxymethyl-D-cysteine and Its Optical Resolution
Yokota, M. ; Oguchi, T. ; Arai, K. ; Toyokura, Ken ; Inoue, C. ; Naijyo, H.
Pub. info.: Crystallization as a separations process.  pp.271-,  1990.  Washington, DC.  American Chemical Society
Title of ser.: ACS symposium series
Ser. no.: 438
91.

Conference Proceedings
Conference Proceedings
91. Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors
Yamada, Y. ; Nishizawa, S. ; Nakashima, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.131-134,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
92.

Conference Proceedings
Conference Proceedings
92. High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
Nishizawa, S.I. ; Kato, T. ; Kitou, Y. ; Oyanagi, N. ; Hirose, F. ; Yamaguchi, H. ; Bahng, W. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.29-34,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
93.

Conference Proceedings
Conference Proceedings
93. Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates
Masahara, K. ; Kushibe, M. ; Ohno, H. ; Kojima, K. ; Takahashi, T. ; Ishida, Y. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.135-138,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
94.

Conference Proceedings
Conference Proceedings
94. Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
Ono, R. ; Fujimaki, M. ; Hon-Joo, N. ; Tanimoto, S. ; Shinohe, T. ; Yatsuo, T. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.435-438,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
95.

Conference Proceedings
Conference Proceedings
95. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.227-230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
96.

Conference Proceedings
Conference Proceedings
96. Mapping on Bulk and Epitaxy Layer 4H-SiC
Ono, R. ; Yatsuo, T. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.431-434,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
97.

Conference Proceedings
Conference Proceedings
97. Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
Nishio, J. ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Ohno, T. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.215-218,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
98.

Conference Proceedings
Conference Proceedings
98. Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation
Hatakeyama, T. ; Watanabe, T. ; Kushibe, M. ; Kojima, K. ; Imai, S. ; Suzuki, T. ; Shinohe, T. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.443-446,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
99.

Conference Proceedings
Conference Proceedings
99. Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC
Senzaki, J. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.901-904,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
100.

Conference Proceedings
Conference Proceedings
100. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
Masahara, K. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Nishio, J. ; Kojima, K. ; Ishida, Y. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.179-182,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393