1.

Conference Proceedings
Conference Proceedings
1. 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200oC Baseplate Temperature
Richmond, J. ; Ryu, S.H. ; Krishnaswami, S. ; Agarwal, A.K. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1445-1448,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
Ivanov, P.A. ; Levinshtein, M.E. ; Agarwal, A.K. ; Krishnaswami, S. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1441-1444,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
Krishnaswami, S. ; Agarwal, A.K. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1437-1440,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules
Agarwal, A.K. ; Krishnaswami, S. ; Damsky, B. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1397-1400,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Simulations of 10 kV Trench Gate IGBTs on 4H-SiC
Zhang, Q.C. ; Ryu, S.H. ; Jonas, C. ; Agarwal, A.K. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1405-1408,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
Krishnaswami, S. ; Ryu, S.H. ; Heath, B. ; Agarwal, A.K. ; Palmour, J.W. ; Geil, B.R. ; Lelis, A.J. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1313-1316,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs
Ryu, S.H. ; Krishnaswami, S. ; Hull, B.A. ; Heath, B. ; Das, M.K. ; Richmond, J.T. ; Agarwal, A.K. ; Palmour, J.W. ; Scofield, J.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1261-1264,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
8.

Conference Proceedings
Conference Proceedings
8. Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors
Agarwal, A.K. ; Ivanov, P.A. ; Levinshtein, M.E. ; Palmour, J.W. ; Rumyantsev, S.L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1349-1352,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT
Tang, Y. ; Chow, T.P. ; Agarwal, A.K. ; Ryu, S.-H. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1341-1344,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor
Agarwal, A.K. ; Ivanov, P.A. ; Levinshtein, M.E. ; Palmour, J.W. ; Rumyantsev, S.L. ; Ryu, S.H. ; Shur, M.S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.743-746,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356