1.

Conference Proceedings
Conference Proceedings
1. The Effects of Phosphorus at the SiO2/4H-SiC Interface
Y.K. Sharma ; A.C. Ahyi ; T. Issacs-Smith ; X. Shen ; S.T. Pantelides
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.743-746,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
2.

Conference Proceedings
Conference Proceedings
2. Stable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin Oxides
Y.K. Sharma ; A.C. Ahyi ; T. Issacs-Smith ; M.R. Jennings ; S.M. Thomas
Pub. info.: HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France.  pp.139-142,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 806