1.

Conference Proceedings
Conference Proceedings
1. Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
A.Z. Zhang ; S.A. Reshanov ; A. Schöner ; W. Kaplan ; N. Kwietniewski
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.549-552,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region
N. Sugiyama ; Y. Takeuchi ; M. Kataoka ; A. Schöner ; R.K. Malhan
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.171-174,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC
A. Schöner ; N. Sugiyama ; Y. Takeuchi ; R.K. Malhan
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.175-178,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces
A.I. Mikhaylov ; A.V. Afanasyev ; V.V. Luchinin ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.480-483,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
5.

Conference Proceedings
Conference Proceedings
5. Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer
A.I. Mikhaylov ; A.V. Afanasyev ; V.V. Luchinin ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.508-511,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
6.

Conference Proceedings
Conference Proceedings
6. A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
M.K. Linnarsson ; J. Isberg ; A. Schöner ; A. Hallén
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.453-456,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
7.

Conference Proceedings
Conference Proceedings
7. Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition
M. Usman ; T. Pilvi ; M. Leskelä ; A. Schöner ; A. Hallén
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.441-444,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
8.

Conference Proceedings
Conference Proceedings
8. 3C-SiC MOS Based Devices: From Material Growth to Device Characterization
J. Lorenzzi ; R. Esteve ; N. Jegenyes ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.433-436,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
9.

Conference Proceedings
Conference Proceedings
9. Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons
M. Weidner ; L. Trapaidze ; G. Pensl ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.439-442,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
10.

Conference Proceedings
Conference Proceedings
10. High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere
A.I. Mikhaylov ; S.A. Reshanov ; A. Schöner ; A.V. Afanasyev ; V.V. Luchinin
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.651-654,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
11.

Conference Proceedings
Conference Proceedings
11. Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs
R. Ghandi ; M. Domeij ; R. Esteve ; B. Buono ; A. Schöner
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.661-664,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
12.

Conference Proceedings
Conference Proceedings
12. Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors
S. Roensch ; S. Hertel ; S. Reshanov ; A. Schöner ; M. Krieger
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.436-439,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
13.

Conference Proceedings
Conference Proceedings
13. Silicon Carbide APD with Improved Detection Sensitivity and Stability
M. Bakowski ; A. Schöner ; I. Petermann ; S. Savage
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1089-1092,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
14.

Conference Proceedings
Conference Proceedings
14. Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
R. Esteve ; A. Schöner ; S.A. Reshanov ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.829-832,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
15.

Conference Proceedings
Conference Proceedings
15. Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation
T. Sledziewski ; A. Mikhaylov ; S. Reshanov ; A. Schöner ; H.B. Weber
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.575-578,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
16.

Conference Proceedings
Conference Proceedings
16. SiC Epi-Channel Lateral MOSFETs
C.T. Yen ; M. Bakowski ; C.C. Hung ; S. Reshanov ; A. Schöner
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.927-930,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
17.

Conference Proceedings
Conference Proceedings
17. Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices
R. Esteve ; A. Schöner ; S.A. Reshanov ; C.-M. Zetterling
Pub. info.: Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California.  pp.115-120,  2010.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1246
18.

Conference Proceedings
Conference Proceedings
18. Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes
A.V. Afanasyev ; V.A. Ilyin ; V.V. Luchinin ; S.A. Reshanov ; A. Schöner ; K.A. Sergushichev ; A.A. Smirnov
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.614-617,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
19.

Conference Proceedings
Conference Proceedings
19. Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier
H. Elahipanah ; N. Thierry-Jebali ; S.A. Reshanov ; W. Kaplan ; A. Zhang ; J.K. Lim ; M. Bakowski ; M. Östling ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.455-458,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897