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Conference Proceedings

1. Surface Preparation of 4 ° Off-Axis 4H-SiC Substrate for Epitaxial Growth

X. Li ; J. ul Hassan ; O. Kordina ; E. Janzén ; A. Henry

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.225-228, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates

X. Li ; S. Leone ; S. Andersson ; O. Kordina ; A. Henry

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.189-192, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

3. CVD Growth of 3C-SiC on 4H-SiC Substrate

A. Henry ; X. Li ; S. Leone ; O. Kordina ; E. Janzén

Pub. info.:	HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France. pp.16-21, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	711