1.

Conference Proceedings
Conference Proceedings
1. Lattice Strain and Defects in Epitaxial Silicon Wafers*
Kirscht,F. ; Snegirev,B. ; Zaumseil,P. ; Kissinger,G. ; Takashima,K. ; Wildes,P. ; Hennessy,J.
Pub. info.: Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices.  pp.60-67,  1997.  Pennington, NJ.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3322
2.

Conference Proceedings
Conference Proceedings
2. A Phenomenological Model for Accurate Determination of Relaxation and Ge Content in Si1-xGex Layers by Raman Line Shift and X-ray Diffractometry
Bhagavannarayana,G. ; Dietrich,B. ; Zaumseil,P. ; Dombrowski,K.F.
Pub. info.: Physics of - Semiconductor Devices -.  Part 1  pp.595-598,  1998.  New Delhi.  Narosa Publishing House
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3316
3.

Conference Proceedings
Conference Proceedings
3. Phase-retrieval x-ray diffractometry in the case of high- or low-flux radiation source
Nikulin,A.Y. ; Zaumseil,P.
Pub. info.: Advances in laboratory-based X-ray sources and optics : 31 July-1 August 2000, San Diego, USA.  pp.193-203,  2000.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4144
4.

Conference Proceedings
Conference Proceedings
4. X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures
Zaumseil,P. ; Fischer,G. G. ; Misiuk,A.
Pub. info.: Solid state crystals in optoelectronics and semiconductor technology : 7-11 October 1996, Zakopane, Poland.  pp.172-175,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3179