1.

Conference Proceedings
Conference Proceedings
1. Etch Characteristics of GaN Using Inductively-Coupled Cl2/HBr and Cl2/Ar Plasmas
Kim, H. S. ; Lee, Y. J. ; Lee, Y. H. ; Lee, J. W. ; Yoo, M. C. ; Kim, T. I. ; Yeom, G. Y.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.367-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
2.

Conference Proceedings
Conference Proceedings
2. High Quality p-Type GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy
Myoung, J. M. ; Kim, C. ; Shim, K. H. ; Gluschenkov, O. ; Kim, K. ; Yoo, M. C.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.385-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
3.

Conference Proceedings
Conference Proceedings
3. Growth and Characterization of AlGaN/GaN Heterostructures with Multiple Quantum Wells by PAMBE
Shim, K. H. ; Myoung, J. M. ; Gluschenkov, O. V. ; Kim, C. ; Kim, K. ; Yoo, M. C. ; Kim, S. ; Turnbull, D. A. ; Bishop, S. G.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.347-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423