1.

Conference Proceedings
Conference Proceedings
1. Stress Voiding and Electromigration Failure in Multilevel Interconnect Metallization
Ho, P.S. ; Anderson, S.G.H. ; Yeo, I.S. ; Hu, C.K.
Pub. info.: Proceedings of the fourth International Symposium on Ultra Large Scale Integration Science and Technology : ULSI science and technology/1993.  pp.220-237,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-13
2.

Conference Proceedings
Conference Proceedings
2. The Physical and Electrical Properties of Poly Sil-xGex as a Gate Electrode Material
Kang, S.-K. ; Ko, D.-H. ; Ahn, T.H. ; Yeo, I.S. ; Lee, K.C. ; Lee, T.W. ; Lee, Y.H.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.581-590,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-2
3.

Conference Proceedings
Conference Proceedings
3. N Type Dopant Activation behaviors of poly Si1-xGex with Ge contents and activation temperature
Kang, S.-K ; Kim, J.J. ; Kang, H.B. ; Yang, C.W. ; Ahn, T.H. ; Yeo, I.S. ; Lee, T.W. ; Lee, Y.H. ; Ko, D.-H.
Pub. info.: Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology.  pp.268-275,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-17
4.

Conference Proceedings
Conference Proceedings
4. The Eletrical characteristics of W/WNx/poly Si1-xGex and the MOSCAP structures with W/WNx/poly Si1-xGex gates stack
Kang, S.-K ; Kim, J.J. ; Kang, H.B. ; Yang, C.W. ; Ahn, T.H. ; Yeo, I.S. ; Lee, T.W. ; Lee, Y.H. ; Ko, D.-H.
Pub. info.: Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology.  pp.276-283,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-17
5.

Conference Proceedings
Conference Proceedings
5. The Electrical Characteristics of the MOSCAP Structures with W/WNx/poly Si1-xGex Gates Stack
Kang, S.-K. ; Kim, J.J. ; Ko, D.-H. ; Ahn, T.H. ; Yeo, I.S. ; Lee, T.W. ; Lee, Y.H.
Pub. info.: Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A..  2002.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 670